please see attached fig 3. Consider the FET amplifier of Fig. 1 for the case V=0.4V and k= 5mA/V² VGs=0.6V, VDD=1.8V, andR=10kΩa)Calculate the value of gm at the bias pointb) If the MOSFET has -0.1 V-1, find ro at the bias point Fig. 1VDDobs

Given,Vt=0.4Vkn=5mA/V2VGS=0.6VVDD=1.8VRD=10kΩλ=0.1V−1 (Channel-length modulation parameter) (a)…

Answered: 3. Consider the FET amplifier of Fig. 1…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Given the BJT bias circuit given below, solve for I_E, I_B, I_C, V_O, and β using the circuit parameters given in Table 1. Determine and verify the operating region of the BJT transistor. Draw the small-signal model of the circuit and solve for the small signal parameters rπ, gm, and ro. Let R_C = 12kΩ, R_B = 30kΩ, R_E = 2.5kΩ, and V_A = 50V. V_EB = 0.8V V_CC = 0V V_EE = -25V I_RC = 1.65mA
1. Assume that the source voltage for the D-MOSFET in the following figure is measured and found to be 1.6 V. a. Compute lo and Vos- b. If gm = 2000 umho, what is the voltage gain? c. Compute the input resistance of the amplifier. d. Is the D-MOSFET operating in the depletion or the enhancement mode? 100 my pp 1.0 kHz HI C₁ 0.1 µF R₁ 5.1 ΜΩ R₂ 10 ΜΩ +VDD +24 V ① RD 2.7 C3 Rs 330 Ω OV ORI C₂ 33 μF
Example 2: Design the bias circuit of the CE amplifier of Figure below to obtain I = 0.5 mA and Vc = +6 V. Design for a dc voltage at the base of 5 V and a current through R2 of 50 µA. Let Vcc=+15 V, B = 100, and VBE ~0.7 V. Specify the values of RB1, R2, RE, and Re. Also give the values of the BJT small-signal parameters gm, r, and r, at the bias point. (For the calculation of r let V₁ = 100 V.) Calculate the input resistance, the output resistance and Avo Vsig Rig www CCI Rin RB V₂ = V₁ RB2 Rc Cc₂ H₁ OV RE THI R R₁ 마 V 24
Question-5: For the circuit in Fig. 4, calculate and fill in the DC bias conditions and then draw a small signal hybrid-a model for the transistor. Solve for r, To, and gm assuming Vr = 26mV. What is the small-signal voltage gain of this BJT circuit? +5V B=100 V= infinite =1mA (@VBE=0.7) 1kO Vc = 1002 V8 = VE = 2mA -5V Fig. 4: Circuit diagram from question-5
2. The following circuit shows a discrete common emitter BJT amplifier. The BJT has B-100, Cx = 5 pF, Cµ =1 pF and VA= 00, VT = 25 mV (1) Find DC collector current (Ic), transconductance (gm), In and re. (2) Draw small signal equivalent circuit of the amplifier in low frequency band, and determine low corner frequency(@L) using approximation method (using time constants). (3) Draw small signal equivalent circuit of the amplifier in high frequency band, and determine the high corner frequency( OH) using approximation method (using time constants). VcC 9V RC 20KQ CC2 O vout 1µF Rsig C1 RL 20ko 1µF 20kQ RB Vsig CE 1MQ 10µF 0.1mA
A BJT Current Mirror is shown below. The nominal current transfer ratio is 1, and the transistors are matched with Is = 4 x 10-¹8A, ß 120, and VA = 40 V. If the current IREF = 150 μA, find: a) The output current lo for V = 2 V b) If the voltage V, changes to 3 V, find the percent change in I, with respect to IREF. IREF 2₁ + V BE 1 22 Vo =
Given the following Common Emitter Amplifier with RE= 500ohm, Ve=2V, and VCC = 20V. Re Rp2 RE Answer the following questions: What is Av open circuit given Rc=1kohm What is Vb? V (leave off the units) What is Vcq? v (leave off the units) There is a bypass capacitor in place. Find the max collector current (Ic (sat) ac operation). Ic(sat) ac = mA (Round to the nearest tenth of a mA. (1 decimal place) (enter only the numbers. no units)
QI// For the BJT amplifier circuit in figure below, determine: 1- Rg, Re, RE and Re2 using Vcc supply of 12 V, an npn silicon transistor with B of 80, of Ic =2 mA and Ve = 7.6 V. Assumed VE = 0.2 Vcc and RE =0.3RE. 2- Z, , Z, ', Ay, and v, using approximate r, equivalent model. o 12V Rc RB RL 600 2 10 ka vo Rs Zo |50 mv -> Zin
Consider the circuit shown below of a common source amplifier with a current mirror bias. Find the following: a. Find kp and kn. b. Find the drain current of M2 given that IBIAS = 2mA and VouT = 2.5V. c. Find the gm and r. of transistor M1. d. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal of M3? If yes, then where is it? If no, then what happens to the small signal model?). It is given that the NMOS (M1) parameters are H,Con = 3mA/V? , VTH,n = 0.5V and A = 0.02 and the PMOS (M2 and M3) parameters are µ.Cox = 1mA/V? and VTH,p = -0.6V. The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has A = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. 5V 5V M3 M2 VOUT VIN M1 IBIAS
Consider the circuit shown below of a common source amplifier with a current mirror bias. Find the following: a. Find kp and kn. b. Find the drain current of M2 given that lBIas = 2mA and Vout = 2.5V. c. Find the gm and ro of transistor M1. d. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal of M3? If yes, then where is it? If no, then what happens to the small signal model?). It is given that the NMOS (M1) parameters are H.Cox = 3mA/V² , VrH,n = 0.5V and A = 0.02 and the PMOS (M2 and M3) parameters are H,Cox = 1mA/V² and VrH,p = -0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has 1 = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. %3D 5V 5V M3 M2 VOUT IBIAS M, - VIN
common-base An NPN BJT with a = 0.93 is used in a amplifier configuration and is biased such that lc = 3 mA with Rc = 1.5 kQ2. It is connected to an ac input signal with a signal resistance of 1 kQ and is feeding a resistive load of 1 kQ. Assume that V₁ = 25 mV and determine the overall voltage gain, Gy. Gv = 0.576 Gv = 0.631 Gv = 0.618 Gv = 0.554
Rsig Vsig Rc pp. Assume B B (B+1) re = 40 C Vout = 6.55 Vpp Vout = 20.3 Vpp Vout = 8.95 Vpp Vout = 13.4 Vpp Bib The model for a common-emitter small- signal BJT amplifier is shown. Determine the peak-to-peak value of Vout if Vsig 100 mV ww www Rc R₁ Vout 100, re = 20 Q and r ks. Other circuit values are Rsig = 1 kQ, = 4 k and R₁ = 10 k + = = 50

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3. Consider the FET amplifier of Fig. 1 for the case V=0.4V and k= 5mA/V² VGs=0.6V, VDD=1.8V, and R=10kΩ a)Calculate the value of gm at the bias point b) If the MOSFET has -0.1 V-1, find ro at the bias point Fig. 1 VDD obs