please see attached fig 3. Consider the FET amplifier of Fig. 1 for the case V=0.4V and k= 5mA/V² VGs=0.6V, VDD=1.8V, andR=10kΩa)Calculate the value of gm at the bias pointb) If the MOSFET has -0.1 V-1, find ro at the bias point Fig. 1VDDobs

Given,Vt=0.4Vkn=5mA/V2VGS=0.6VVDD=1.8VRD=10kΩλ=0.1V−1 (Channel-length modulation parameter) (a)…

Answered: 3. Consider the FET amplifier of Fig. 1…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Given the BJT bias circuit given below, solve for I_E, I_B, I_C, V_O, and β using the circuit parameters given in Table 1. Determine and verify the operating region of the BJT transistor. Draw the small-signal model of the circuit and solve for the small signal parameters rπ, gm, and ro. Let R_C = 12kΩ, R_B = 30kΩ, R_E = 2.5kΩ, and V_A = 50V. V_EB = 0.8V V_CC = 0V V_EE = -25V I_RC = 1.65mA
1. Assume that the source voltage for the D-MOSFET in the following figure is measured and found to be 1.6 V. a. Compute lo and Vos- b. If gm = 2000 umho, what is the voltage gain? c. Compute the input resistance of the amplifier. d. Is the D-MOSFET operating in the depletion or the enhancement mode? 100 my pp 1.0 kHz HI C₁ 0.1 µF R₁ 5.1 ΜΩ R₂ 10 ΜΩ +VDD +24 V ① RD 2.7 C3 Rs 330 Ω OV ORI C₂ 33 μF
Please Answer the following: In the circuit shown, if the transistor has V, = 1.1 V, kn = 1.3 mA/V², and Ip= 1 mA. Find gm and r. if VA = 60 V. Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. 1. 2. Find Rin and Ro. 3. Find the overall voltage gain vo/Vị. 6 V 250 k2 ovo 500 k2 Vi 1.66 k2 Rin R. 두
In the circuit shown , the transistor has a ß of 100, VT = 26mV, and VEB = 0.7V. i) Write the 5 steps required to solve such a problem. ii) Find Rin iii) Use T Model to Find the overall voltage gain (vo/Vsig) iv) For an output signal of +0.4 V, what values of vsig i and vp are required? +5 V +1.5 V ) 10 mA 10 kN Rig 1 kN Vsig Rc 100 N
For the given circuit, a) Find Qpoints of BJT and MOSFET transistors. b) Find the overall small-signal voltage gain. (BJT: VBE =0.7 V, B-100) (MOSFET: V-1.2 V, K-200μA/V², λ=0) Vi 383K C1 11 www 135K www 3.9K 16.1K Q1 C2 www Q2 88 -8K +5V C3 -SV 4K Vo
Example 2: Design the bias circuit of the CE amplifier of Figure below to obtain I = 0.5 mA and Vc = +6 V. Design for a dc voltage at the base of 5 V and a current through R2 of 50 µA. Let Vcc=+15 V, B = 100, and VBE ~0.7 V. Specify the values of RB1, R2, RE, and Re. Also give the values of the BJT small-signal parameters gm, r, and r, at the bias point. (For the calculation of r let V₁ = 100 V.) Calculate the input resistance, the output resistance and Avo Vsig Rig www CCI Rin RB V₂ = V₁ RB2 Rc Cc₂ H₁ OV RE THI R R₁ 마 V 24
D5 The bipolar transistors in the circuit below have β=100 and the same EBJ area. Neglect the Early effect. Find the following: a) Bias current of all transistors b) Av = vout/vin c) The amplifier’s input impedance RIN d) The amplifier’s output impedance ROUT
4
For the BJT amplifier below, VCEQ = 6.02 V, ItQ=2.85mA, RE= 820 O, Vec= 16 V, a of the Si transistor is 0.995 and ro = infinity. %3D %3D Vec RC + C, VCE The collector resistor, RC is cquivalent to Q using commercially available resistors. O 3.6K O 5.6K O 2.2K O 2.7K
II) Design a CS amplifier using E-MOSFET with voltage divider biasing Given: The voltage gain 20dB, Vas= 6V, Voo=15V (gm=5000μS).
6. A BJT used in a circuit as shown has a common emit- ter current gain of 100 and a DC base-to-emitter voltage of 0.6 V. Most nearly, the output voltage of the circuit is R2 = 0.8 kn %3D R, = 20 kn %3D Vcc = 10 V Vout V, = 3V (A) 0.4 V (B) 2 V (C) 3 V (D) 10 V
Question-5: For the circuit in Fig. 4, calculate and fill in the DC bias conditions and then draw a small signal hybrid-a model for the transistor. Solve for r, To, and gm assuming Vr = 26mV. What is the small-signal voltage gain of this BJT circuit? +5V B=100 V= infinite =1mA (@VBE=0.7) 1kO Vc = 1002 V8 = VE = 2mA -5V Fig. 4: Circuit diagram from question-5

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3. Consider the FET amplifier of Fig. 1 for the case V=0.4V and k= 5mA/V² VGs=0.6V, VDD=1.8V, and R=10kΩ a)Calculate the value of gm at the bias point b) If the MOSFET has -0.1 V-1, find ro at the bias point Fig. 1 VDD obs