Example 2:Design the bias circuit of the CE amplifier of Figure below to obtain I = 0.5 mA and Vc =+6 V. Design for a dc voltage at the base of 5 V and a current through R2 of 50 µA. LetVcc=+15 V, B = 100, and VBE ~0.7 V. Specify the values of RB1, R2, RE, and Re. Also give thevalues of the BJT small-signal parameters gm, r, and r, at the bias point. (For the calculation of rlet V₁ = 100 V.)Calculate the input resistance, the output resistance and AvoVsigRigwwwCCIRinRBV₂ = V₁RB2Rc Cc₂H₁OVRETHIRR₁마V24

Given values, IE=0.5mAIRB2=50μAVCC=15Vβ=100VC=6VVB=5VVBE=0.7VIE=IC=0.5mA

Example 2: Design the bias circuit of the CE amplifier of Figure below to obtain I = 0.5 mA and Vc +6 V. Design for a dc voltage at the base of 5 V and a current through R2 of 50 µA. Let Vcc=+15 V, B = 100, and VE~0.7 V. Specify the values of R1, R2, RE, and Re. Also give the values of the BJT small-signal parameters gm, r, and r, at the bias point. (For the calculation of r let V₁ = 100 V.) Calculate the input resistance, the output resistance and Avo Usig Rig www CCI RB RB2 Rc tu OV Cc₂ RE =C₂ OF R₂ V 24

Example 2: Design the bias circuit of the CE amplifier of Figure below to obtain I = 0.5 mA and Vc +6 V. Design for a dc voltage at the base of 5 V and a current through R2 of 50 µA. Let Vcc=+15 V, B = 100, and VE~0.7 V. Specify the values of R1, R2, RE, and Re. Also give the values of the BJT small-signal parameters gm, r, and r, at the bias point. (For the calculation of r let V₁ = 100 V.) Calculate the input resistance, the output resistance and Avo Usig Rig www CCI RB RB2 Rc tu OV Cc₂ RE =C₂ OF R₂ V 24

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

This question is about Mosfets as Amplifiers. Please help me with this. 6V VIN o VOUT RA It is given that the NMOS parameters are k, = 5A and VTH,n = 0.5V and the resistor RA = 1kN. Use AV = 2mV. Assume no channel length modulation. a.) Find the VTC of this amplifier. b.) Find the input bias voltage needed to achieve an output voltage of 3.0V and find the amplifier's gain at this bias condition. c.) Find the input bias voltage needed for maximum output voltage swing.
14) i need fast please now
choose the correct answer 33
DO NOT COPY FROM OTHER WEBSITES
B= infinity, Assume BJTs are identical. Find R such that a DC current of 0.25mA for transistors Q1 and 2. Find Rc that results in 3V DC at he collectors of Q1 and 2. Find the differential voltage gain.
4. Calculate the resistance Re for this circuit to drive the transistor into saturation. The BJT operates in the saturation region when its collector current is not dependent on the base current and has reached a maximum. BJT when saturated, VCE(sat) ≤ 0.2 V. $RB Is +10v Jafalka VCE = 0.2V B=150
Figure 1 shows the transfer curves of two different type of FET transistors. The transfer curve of transistor A is shown in Figure 1(a) that has ID(on) = 5mA and VGS(on) = 7V. Meanwhile, the transfer curve of transistor B is shown in Figure 1(b). (i) Determine the type of transistor A and B. (ii) State the correct equation for the transfer curve A and B. (iii) Sketch the basic construction of transistor A and B and label each part correctly. (iv) Briefly discuss one similarity in terms of the construction between the transistors A and B. 4'o (mA) D (mA) 8 12 11 7 10 5 4 6. 3 2 1 2 3 4 5 6. 7 8 VGS 1 -5 -4 -3 -2 -1 VGs Figure 1(a) Figure 1(b)
Calculate the small-signal voltage gain, input resistance and output resistance of the BJT amplifier circuit At 300K. Assume that the BJT and circuit parameters are: B=100,Vcc=12V ,VBE=0.7V , Rc = 6KN,RB = 50KN and %3D VBB = 1.2V %3D
Vi RB Vcc Rc our A BJT (B=200) is implemented in an amplifier circuit, with a VCC of 15 volts. One wishes to set the Q point at IC = 5.76 mA and VCE = 6.73 volts (DC). Determine RB.
Please solve a), b) and c) with clear steps.Value of beta =120
Q.6 Determine the values of transconductance for an n-channel enhancement MOSFET having threshold voltage VT = 3V at the following operating points (i) 6V and (ii) 8V
Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain BF = 100, and two resistances RB = 1kN and Rc = 1kN. The supply voltage is Vcc = 10 volts. The currents Ig and Ic designate the base and collector currents, respectively, whereas the voltage VCẸ denotes the voltage between collector and emitter. Vcc = 10 volts Rc =1 k2 Rg = 1 k2 VCE GND Throughout this question, you will use VBE,on = 0.7 volt and VCE,sat = 0.2 volt. Recall that VBE.on is the threshold voltage of the base-emitter junction, while VCE.sat represents the voltage that is measured between collector and emitter when the BJT is saturated. a) What is the value of the base current In? Please enter the value expressed in milliamperes (mA) in the box below. For instance, if you think that IR = 0.1 A, enter 100 in the box. If you think that Ip = 10 mA, enter 10 in the box. mas-numbas-Iti.ncl.ac.uk Submit part Unanswered b)…