1. Assume that the source voltage for the D-MOSFET in the following figure is measured and found to be 1.6 V. Compute / and VDs. b. If gm = 2000 umho, what is the voltage gain? c. Compute the input resistance of the amplifier. d. Is the D-MOSFET operating in the depletion or the enhancement mode? a. 100 mV pp 1.0 kHz C1 0.1 μF W R₁ 5.1 ΜΩ w R₂ 10 ΜΩ +VDD +24 V + www RD 2.7 C3 Rs • 330 Ω 1 μF OV ou C₂ 33 μF

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.