i need the answer quickly 12. An n-channel D-MOSFET with a positive Ves is operating in(a) the depletion mode(b) the enhancement mode(c) cutoff(d) saturation13. A certain p-channel E-MOSFET has a Ves(th) = -2 V. If Vas = 0 V, the drain current is%3D(a) 0 A(b) Ip(on)(c) maximum(d) /pss14. In an E-MOSFET, there is no drain current until Ves(a) reaches Vcs(th)(b) is positive(c) is negative(d) equals 0 V15. An IGBT is generally used in(a) low-power applications(b) rf applications(c) high-voltage applications(d) low-current applications

As per the honor code I will do only first three questions. Kindly repost the other questions again.…

12. An n-channel D-MOSFET with a positive Vcs is operating in (a) the depletion mode (b) the enhancement mode (c) cutoff (d) saturation 13. A certain p-channel E-MOSFET has a Vcs(th) = -2 V. If Vcs = 0 V, the drain current is %3D (a) 0 A (b) /p(on) (c) maximum (d) /pss 14. In an E-MOSFET, there is no drain current until Ves (a) reaches Vesch) (b) is positive (c) is negative (d) equals 0 V

12. An n-channel D-MOSFET with a positive Vcs is operating in (a) the depletion mode (b) the enhancement mode (c) cutoff (d) saturation 13. A certain p-channel E-MOSFET has a Vcs(th) = -2 V. If Vcs = 0 V, the drain current is %3D (a) 0 A (b) /p(on) (c) maximum (d) /pss 14. In an E-MOSFET, there is no drain current until Ves (a) reaches Vesch) (b) is positive (c) is negative (d) equals 0 V

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

i need the answer quickly

12. An n-channel D-MOSFET with a positive Ves is operating in
(a) the depletion mode
(b) the enhancement mode
(c) cutoff
(d) saturation
13. A certain p-channel E-MOSFET has a Ves(th) = -2 V. If Vas = 0 V, the drain current is
%3D
(a) 0 A
(b) Ip(on)
(c) maximum
(d) /pss
14. In an E-MOSFET, there is no drain current until Ves
(a) reaches Vcs(th)
(b) is positive
(c) is negative
(d) equals 0 V
15. An IGBT is generally used in
(a) low-power applications
(b) rf applications
(c) high-voltage applications
(d) low-current applications

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