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3. The Fermi level in a silicon sample at equilibrium is located 0.36 eV above the middle of the band gap. At 7= 300 K, a) Draw the energy diagram with all the energy levels mentioned in this problem (including in (b) and (c)) and with their relative energies (energy differences) marked. b) Determine the probability of occupancy of a state located at the middle of the band gap. c) Determine the probability of occupancy of the donor states if the donor states are located 0.04 eV below the bottom of the conduction band. (20 pts)

3. The Fermi level in a silicon sample at equilibrium is located 0.36 eV above the middle of the band gap. At 7= 300 K, a) Draw the energy diagram with all the energy levels mentioned in this problem (including in (b) and (c)) and with their relative energies (energy differences) marked. b) Determine the probability of occupancy of a state located at the middle of the band gap. c) Determine the probability of occupancy of the donor states if the donor states are located 0.04 eV below the bottom of the conduction band. (20 pts)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3. The Fermi level in a silicon sample at equilibrium is located 0.36 eV above the middle of the band gap. At T = 300 K, a) Draw the energy diagram with all the energy levels mentioned in this problem (including in (b) and (c)) and with their relative energies (energy differences) marked. b) Determine the probability of occupancy of a state located at the middle of the band gap. c) Determine the probability of occupancy of the donor states if the donor states are located 0.04 eV below the bottom of the conduction band. 

3. The Fermi level in a silicon sample at equilibrium is located 0.36 eV above the middle of the band gap. At 7= 300 K, a) Draw the energy diagram with all the energy levels mentioned in this problem (including in (b) and (c)) and with their relative energies (energy differences) marked. b) Determine the probability of occupancy of a state located at the middle of the band gap. c) Determine the probability of occupancy of the donor states if the donor states are located 0.04 eV below the bottom of the conduction band. (20 pts)
Transcribed Image Text:3. The Fermi level in a silicon sample at equilibrium is located 0.36 eV above the middle of the band gap. At 7= 300 K, a) Draw the energy diagram with all the energy levels mentioned in this problem (including in (b) and (c)) and with their relative energies (energy differences) marked. b) Determine the probability of occupancy of a state located at the middle of the band gap. c) Determine the probability of occupancy of the donor states if the donor states are located 0.04 eV below the bottom of the conduction band. (20 pts)
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