Please make it legible 2. An NMOS transistor that is operated with a small VDS is found to exhibit a resistance rps.By what factor will rps change in each of the following situations?a. Vov is doubledb. The device is replaced with another fabricated in the same technology but withdouble the widthc. The device is replaced with another fabricated in the same technology but withboth the width and length doubled.d. The device is replaced with another fabricated in a more advanced technologyfor which the oxide thickness is halved and similarly for W and L (assume unremains unchanged.)

Answered: Image /qna-images/answer/0fa6c9f4-c7b5-4b4f-af0d-5f07fdf5c0db.jpg

Answered: 2. An NMOS transistor that is operated…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Draw the IV graph for a MOSFET in deletion mode, with a drain source current of 1.2 mA. Indicate this value on the graph
Sketch the transfer and drain characteristics of an n - channel depletion type MOSFET with IDSS = 12 mA and VP = –8 V for a range of VGS = –VP to VGS = 1V. Show the details of your work.
How does the construction of a transistor differ from the construction of a PN junction diode? What are the two types of transistors? What are the three parts of a transistor called? Draw and label the schematic symbols for an NPN and a PNP transistor. What are transistors used for? How are transistors classified? What symbols are used to identify transistors? What purposes does the packaging of a transistor serve? How are transistor packages labeled? What are the basic functions of a transistor? What is the proper method for biasing a transistor? What is the difference between biasing an NPN and a PNP transistor? What is the barrier voltage for a germanium and a silicon transistor? What is the difference between the collector-base junction and the emitter- base junction bias voltages? What may cause a transistor to fail? What are two methods of testing a transistor? When using an ohmmeter, what should the results be for an NPN transistor? What are the two…
In a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.
Question 3: A 2N6755 Harris n-channel MOSFET has a de supply voltage of 60-V, and a load resistance of 6-2. With a gate-source voltage of 10-V, the on-state resistance is 0.2-2. (a) Assuming that the MOSFET is acting as a simple on-off switch, determine the load power and efficiency. (b) The MOSFET above is now used in a 20-kHz chopper circuit. Assuming the parameters remain unchanged, calculate the load power and efficiency at a chopper duty cycle of 0.4.
The breakdown voltage of a lot of transistors is assumed to follow a normal distribution.Ten samples are tested from this lot, getting the following measurements for breakdownvoltage.- Customer specifications are.-Upper limit: 52.8Lower limit: 47.2What is the Cpk for this lot ?.If this lot has a million transistors, how many would be found below the lower limit and how many above the upper limit ?
1. In normal operation, a p-n-p transistor connected in common-base configuration has a. the base at a higher potential than the emitter b. the collector at a higher potential than the base c. the emitter at a lower potential than the base d. the collector at a lower potential than the emitter 2. In normal operation, the junctions of an n-p-n transistor are: a. base-emitter forward biased and base-collector reverse biased b. both reverse biased c. both forward biased d. base-collector forward biased and base-emitter reverse biased 3. The current flow across the base-emitter junction of an n-p-n transistor consists of a. equal numbers of holes and electrons b. the leakage current c. mainly electrons d. mainly holes 4. What is the opposition offered by a coil to (a) the flow of alternating current and (b) a change in current? a. (a) Resistance (b) Inductance b. (a) Reactance (b)…
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7. Although, geometrically no difference exists between the source and a drain of a MOSFET, drain and source terminals of a MOSFET are distinguished electrically. How are they distinguished in an nMOS transistor?
1. An NPN transistor is forward biased when A. positive voltage, with respect to its emitter, is applied to the base B. A negative voltage, with respect to its emitter, is applied to the base C. A positive voltage, with respect to its base, is applied to the emitter D. A negative voltage, with respect to its base, is applied to the emitter 2. Which statement is true for transistors? A. Most of the majority carriers from the emitter recombine in the base B. Most of the majority carriers from the emitter recombine in the collector C. Most of the majority carriers from the emitter pass through the base region to the collector D. Most of the majority carriers from the emitter pass through the collector region to the base 3. Which statement is Ture about the terminals of a transistor? A. The collector and emitter terminals are interchangeable B. The emitter is smaller and…
#12 and #38
Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VD

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