A PN junction diode has the following doping profile around the metallurgical junction. For this junction, sketch the expected: (a) Charge density (b) Electric field (c) Electrostatic potential inside the diode based on the depletion approximation. NA - ND -No Problem 3 For the PN junction diode in problem 2, derive the analytical expressions for the: (a) Electric field distribution as a function of x (b) Electrostatic potential distribution as a function of x (c) Built-in potential Assuming the doping is ND for x < 0 and NA - ND = ax for x≥0. The semiconductor permittivity is €5. You can leave your answers in terms of constants provided in the problem, e.g. ND, NA, α, x, xn and Es

A PN junction diode has the following doping profile around the metallurgical junction. For this junction, sketch the expected: (a) Charge density (b) Electric field (c) Electrostatic potential inside the diode based on the depletion approximation. NA - ND -No Problem 3 For the PN junction diode in problem 2, derive the analytical expressions for the: (a) Electric field distribution as a function of x (b) Electrostatic potential distribution as a function of x (c) Built-in potential Assuming the doping is ND for x < 0 and NA - ND = ax for x≥0. The semiconductor permittivity is €5. You can leave your answers in terms of constants provided in the problem, e.g. ND, NA, α, x, xn and Es

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Similar questions

Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
7. Ideally, a diode can be represented by a: a. voltage source b. resistance C. switch d. all of these 8. For a silicon diode, the value of the forward-bias voltage typically: must be greater than 0.3 V must be greater than 0.7 V c. depends on the width of the depletion region d. depends on the concentration of majority a. b.
Please solve i Give upvote
Consider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 Q
Demonstrate clipping of negative waves with an inverted diode in the output.A circuit which removes the peak of a waveform is known as a clipper. Show a negativeProduce a schematic diagram.During the positive half cycle of the 5 V peak input, the diode is reversed biased. The diodedoes not conduct. It is as if the diode were not there. Show the positive half cycle isunchanged at the output V(2). Show the output positive peaks overlays the input sinewaveV(1).Voltage values: Resistor valuse: 1 K ΩDC offset: 0 VAmplitude: 5 VFreq: 1 KHz
please see atatched screenshot...
A one-sided abrupt silicon p-n junction diode is to be designed to have a breakdown voltage of at least 60 V and to have a forward-bias current of 50 mA for an applied voltage of 0.625 V while still operating under low injection. The minority carrier lifetimes are To = Tno = Tpo = 2 x 10-7 sec. Determine the doping concentrations and the minimum cross-sectional area.
Solve with all the steps in detail and draw properly
Question 1 (a) (i) (ii) (iii) Plot the current-voltage characteristic of a p-n diode. In your plot include the forward bias region, reverse bias region and any other important features. Explain what is the major difference between a Zener diode and a p-n diode. Provide one electronic application where a Zener diode is used.
Sketch the energy band diagram for an ideal p+-n step junction diode showing the carrier activity in and near the depletion region when (a) VA = 0. (b) VA > 0. (c) VA < 0
Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?