In a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.
In a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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![In a properly Biased NPN transistor most of the electrons from the emitter
A. recombine with holes in the base,
B. recombine in the emitter its self,
C. pass through the base to the collector,
D. are stopped by the junction barrier.
In transistor, the relation among emitter current, base current and Collector Current is:
A. Ic=IB+IE,
B. Ig=IB+Ic,
C. IE=Ic-IB,
D. I=Ig-Ic.
• Transistor is known as bipolar transistor because it has:
A. Electrons,
В. Holes,
C. Electrons and holes,
D. None of the above.
In NPN or PNP transistor:
A. Ic> IE,
B. IE >Ic,
C. IE = Ic,
D. None of the above.
The base of an NPN transistor is:
A. Heavily doped,
B. Lightly doped,
C. Medium Doped,
D. Doped by pentavalent material.
In a transistor the value of a (B) is 100, the value of (a) is:
A. 0.01,
В. О.1,
C. 0.99,
D.1.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F905ae196-e48e-477b-a72a-d8309e0eb1da%2F973d9880-4090-4249-8885-c4f995f8ab00%2Fs84xa9.jpeg&w=3840&q=75)
Transcribed Image Text:In a properly Biased NPN transistor most of the electrons from the emitter
A. recombine with holes in the base,
B. recombine in the emitter its self,
C. pass through the base to the collector,
D. are stopped by the junction barrier.
In transistor, the relation among emitter current, base current and Collector Current is:
A. Ic=IB+IE,
B. Ig=IB+Ic,
C. IE=Ic-IB,
D. I=Ig-Ic.
• Transistor is known as bipolar transistor because it has:
A. Electrons,
В. Holes,
C. Electrons and holes,
D. None of the above.
In NPN or PNP transistor:
A. Ic> IE,
B. IE >Ic,
C. IE = Ic,
D. None of the above.
The base of an NPN transistor is:
A. Heavily doped,
B. Lightly doped,
C. Medium Doped,
D. Doped by pentavalent material.
In a transistor the value of a (B) is 100, the value of (a) is:
A. 0.01,
В. О.1,
C. 0.99,
D.1.
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