Q1// For the BJT amplifier circuit in figure below, determine: 1- Rg, Rc, RE1 and RE2 using Vcc supply of 12 V, an npn silicon transistor with B of 80, of Ic =2 mA and Ve = 7.6 V. Assumed VE = 0.2 Vcc and REI =0.3RĘ. 2- Z , Z, ', Ay, and v, using approximate r, equivalent model. O 12V Rc RB 600 2 10 ka Rs Zo Ra 50 mv -> Zin ww

Q1// For the BJT amplifier circuit in figure below, determine: 1- Rg, Rc, RE1 and RE2 using Vcc supply of 12 V, an npn silicon transistor with B of 80, of Ic =2 mA and Ve = 7.6 V. Assumed VE = 0.2 Vcc and REI =0.3RĘ. 2- Z , Z, ', Ay, and v, using approximate r, equivalent model. O 12V Rc RB 600 2 10 ka Rs Zo Ra 50 mv -> Zin ww

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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1:- For the emitter bias circuit shown in figure(1), if Vec-20V, B-50, RC-2k2, RB-430k2, and RE=1kQ. Vee (a) Determine IB, IC, and IE. (b) Determine VCE, VC, VE, VB. RB (c) Draw the de load line. Vo (d) The stability factor SICO. vì For the amplifier
Q1. (a) Using the hybrid-pi model with early voltage effect, compute the small signal voltage gain, Av, input resistance and output resistance for the CE BJT amplifier shown below. Vec = 12 V B=100 VELON) = 0.7V V = 100V R = 93.7k2 %3D E R=6 kN Rg=0.5 k2 C, E R2= 6.3 k2 Figure Q1(a)
Enclosed please find an amplifier circuit designed with a BJT transistor. VCC = 9Volt for the circuit. All capacity values are selected sufficiently large. BJT Transistor B = 100 Vbe(on) = 0.8V, VA=100V, Vt= 26mV Vce (sat) = 0.15Volt. Calculate “Vceq” and “Icq “ values at the operating point of the circuit. In what area does this BJT transistor work in? Draw the small signal equivalent circuit of the circuit. Calculate the AC small signal current earnings of the circuit (Ai = I out / I input). Note: Is the current passes over Rs source resistance and The IO current passes over RL source resistance. Please Calculate Rin input resistance?
Since the transistors used in the circuit are b=200 and r0= ∞(endless);A) By analyzing the DC for each amplifier floor separatelyre1, re2 find resistance values.B) Draw the AC equivalent circuit of the amplifier circuit.C) For each floor Zi=?, Z0 =?D) For each amplifier floor Av1, Av2 find the tension gains.E) Avl find Vl voltage value by finding voltage gain.
Figure 2 shows a typical BJT amplifier, with its parasitic capacitances displayed. The current gain of the transistor is B=150 and the voltage gain of the amplifier is Am =-125. The small signal resistances of the transistor are re =16 ohm and r0 = infinity, respectively. The values of resistors and capacitors in the figure are: R1 =80 kohm, R2 =20 Kohm, Rc = 2 Kohm, RE = 2 Kohm, Rs =50 W, RI=5 kohm, Cs=2 uF, Cc=2 uF, Ce =10 uF, Cbc =4 pF, Cbe = 10 pF, Cce =1 pF, Cwi = 4 pF, CWO = 9 pF, and Vcc = 20 V. a) Sketch a simplified circuit diagram of Figure 2 for high frequency analysis. b) Using the concept of "Miller effect capacitance", calculate the input and Output Miller effect capacitances of Figure 2, respectively. C) Determine the upper cut-off frequency of Figure 2 that is imposed by its input network only. d) Explain briefly the possible ways to increase the upper cut-off frequencv of this amplifier.
III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-source resistively loaded amplifier uses this MOSFET. The resistive load RL = 1,000 ohms and the drain power supply (VDD) = 3 volts. (a) Draw the load line over the l-V characteristics shown immediately below.. (b) What is the slope of the resistive load line? VDD =3 volts 6 mA 5 mA -+ R. 4 mA + 3 mA -t 2 mA 1 mA 3 V 4 V 5 V Vps
5) Design a Common source E-MOSFET amplifier and write the formula of voltage gain
Construct an approximate voltage transfer characteristic curve of the amplifier by filling up the table below using the large signal model of the transistor and plotting the results. VI (volts) vo (volts) -2.0 0.0 1.0 2.0 Remarks assume linear transition to saturation transition to cut-off assume cut-off VI 2.5 V 100 K Ţ Vo
c) Figure 2.3 shows the circuit diagram of a typical npn BJT common emitter amplifier. The values of RB1-30 kOhm, RB2=10.XY kOhm, Rc-3.XY kOhm, Ic=2.XY mA and Vcc=24 V. If the transistor current gain 3 = 50 determine using the full analysis and assuming VBE = 0.7 V the value of RE, hence identify the location of the Q-point (Ic, VCE, IB and VBE). Now sketch the AC circuit model of this amplifier and determine the value of the ac open circuit voltage gain Av and the ac short circuit current gain Ai. (Assume that Vth = 26 mV). Vin RB1 Cin lin RB2 -10 Rc VB RE + Vcc Vc Cout VE www li Figure 2.3 Vout Ce ¡out x=1 y=7
In single transistor amplifier design, it is observed that the voltage gain will always decrease as the load resistance increases. True False The saturation region of MOSFET indicates that the drain current no longer depends on the source-drain voltage while the saturation region of BJT indicates that the collector current no longer depends on the collector-emitter voltage. True False A bipolar junction transistor can be connected to behave like a diode while a field effect transistor can not be connected to behave like a diode. True False A voltage follower circuit is usually designed to have the power gain slightly less than 1 with any passive load. True False A clipper circuit regulates DC voltage input while a clamp circuit regulates AC voltage input. True False
Derive the operating point ,Q-pt., of the BJT voltage-divider bias circuit shown using Exact analysis.
In an emitter-biased transistor circuit, we have collector source voltage V CC = 15 V, collector resistance RC = 3.5 kOhm, emitter voltage V_E = 4.3 V and emitter current LE = 2.1 mA. If the current gain is 150, what is the difference in emitter-collector voltage V_CE when we calculate it including the gain factor vs when it is calculated by assuming collector current LC = LE? Select one: O a. 3.35 V O b. 3.40 V OC 0.05 V O dov