The current mirror design below has the following technology and design parameters. * All MOSFET transistors: L=7,9 µm, V=0.3 V, K = 283.1 µA/V²,and V' 23.1 V/µm. %3D tn An *The resistor R=1.5 KN, and * transistor Q2 has W,-35.5 um. * Supply voltage Vn-8.8 V. DD *Ignore channel length modulation in your DC current equations. Find W, , the width of transistor 0, in (um), knowing that the current I for this circuit changes by 5.4 µA when V changes by 0.9 V.
The current mirror design below has the following technology and design parameters. * All MOSFET transistors: L=7,9 µm, V=0.3 V, K = 283.1 µA/V²,and V' 23.1 V/µm. %3D tn An *The resistor R=1.5 KN, and * transistor Q2 has W,-35.5 um. * Supply voltage Vn-8.8 V. DD *Ignore channel length modulation in your DC current equations. Find W, , the width of transistor 0, in (um), knowing that the current I for this circuit changes by 5.4 µA when V changes by 0.9 V.
Introductory Circuit Analysis (13th Edition)
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KVL and KCL
KVL stands for Kirchhoff voltage law. KVL states that the total voltage drops around the loop in any closed electric circuit is equal to the sum of total voltage drop in the same closed loop.
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Transcribed Image Text:The current mirror design below has the following technology and design parameters.
All MOSFET transistors:
L=7.9 µm, V=0.3 V, k = 283.1 uA/V²,and V" = 23.1 V/µm.
An
tn
* The resistor R=1.5 KN, and
transistor Q2 has W,-35.5 um.
* Supply voltage Vop-8.8 V.
DD
*Ignore channel length modulation in your DC current equations.
Find W, , the width of transistor Q, in (um), knowing that the current I, for this circuit changes by 5.4 µA when V changes by 0.9 V.
VDD
lo
ER
Vo
Q1
Q2
Answer:
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