The current mirror design below has the following technology and design parameters. * All MOSFET transistors: L=7,9 µm, V=0.3 V, K = 283.1 µA/V²,and V' 23.1 V/µm. %3D tn An *The resistor R=1.5 KN, and * transistor Q2 has W,-35.5 um. * Supply voltage Vn-8.8 V. DD *Ignore channel length modulation in your DC current equations. Find W, , the width of transistor 0, in (um), knowing that the current I for this circuit changes by 5.4 µA when V changes by 0.9 V.

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The current mirror design below has the following technology and design parameters.
All MOSFET transistors:
L=7.9 µm, V=0.3 V, k = 283.1 uA/V²,and V" = 23.1 V/µm.
An
tn
* The resistor R=1.5 KN, and
transistor Q2 has W,-35.5 um.
* Supply voltage Vop-8.8 V.
DD
*Ignore channel length modulation in your DC current equations.
Find W, , the width of transistor Q, in (um), knowing that the current I, for this circuit changes by 5.4 µA when V changes by 0.9 V.
VDD
lo
ER
Vo
Q1
Q2
Answer:
Transcribed Image Text:The current mirror design below has the following technology and design parameters. All MOSFET transistors: L=7.9 µm, V=0.3 V, k = 283.1 uA/V²,and V" = 23.1 V/µm. An tn * The resistor R=1.5 KN, and transistor Q2 has W,-35.5 um. * Supply voltage Vop-8.8 V. DD *Ignore channel length modulation in your DC current equations. Find W, , the width of transistor Q, in (um), knowing that the current I, for this circuit changes by 5.4 µA when V changes by 0.9 V. VDD lo ER Vo Q1 Q2 Answer:
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