Design a common-emitter amplifier to provide a small-signal voltage gain of approximately -10. 1. Consider the circuit shown in Figure 1. Show the following calculations in your notebook: Calculate a value for Rc so that A, z -10 Calculate values for R1 and R2 so that the circuit is bias stable and near the center of the load line. (Note: Use the datasheet for the 2N5209 transistor to make your calculations more accurate).

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MAXIMUM RATINGS
CASE 29-04, STYLE 1
то-92 (TO-226AA)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Base Voltage
Vсво
50
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Collector Current – Continuous
Ic
50
mAdc
PD
Total Device Dissipation @ TA = 25°c
Derate above 25°C
625
mW
5.0
mW/°C
Total Device Dissipation @ Tc = 25°C
Derate above 25°C
PD
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
- 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
REJA
200
°C/W
Ambient
Thermal Resistance, Junction to Case
ROJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
%3D
Characteristic
Symbol
Min
Мax
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
50
Vdc
(Ic = 1.0 mAdc, Ig = 0)
Collector-Base Breakdown Voltage
V(BR)CBO
50
Vdc
(Ic = 0.1 mAdc, lE = 0)
Collector Cutoff Current
ICBO
50
nAc
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
IEBO
50
nAdc
(VEB = 3.0 Vdc, Ic = 0)
Transcribed Image Text:MAXIMUM RATINGS CASE 29-04, STYLE 1 то-92 (TO-226AA) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage Vсво 50 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current – Continuous Ic 50 mAdc PD Total Device Dissipation @ TA = 25°c Derate above 25°C 625 mW 5.0 mW/°C Total Device Dissipation @ Tc = 25°C Derate above 25°C PD 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg - 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to REJA 200 °C/W Ambient Thermal Resistance, Junction to Case ROJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) %3D Characteristic Symbol Min Мax Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc (Ic = 1.0 mAdc, Ig = 0) Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc (Ic = 0.1 mAdc, lE = 0) Collector Cutoff Current ICBO 50 nAc (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current IEBO 50 nAdc (VEB = 3.0 Vdc, Ic = 0)
Design a common-emitter amplifier to provide a small-signal voltage gain of approximately -10.
1. Consider the circuit shown in Figure 1. Show the following calculations in your
notebook:
Calculate a value for Rc so that A, z –10
Calculate values for R1 and R2 so that the circuit is bias stable and near the center
of the load line.
(Note: Use the datasheet for the 2N5209 transistor to make your calculations more
accurate).
Vcc = 10 V
R1
Rc
Cc2
Cci
RL
Vs
R,
REj = 499 Q
Figure 1: Common-emitter amplifier for part #1
Transcribed Image Text:Design a common-emitter amplifier to provide a small-signal voltage gain of approximately -10. 1. Consider the circuit shown in Figure 1. Show the following calculations in your notebook: Calculate a value for Rc so that A, z –10 Calculate values for R1 and R2 so that the circuit is bias stable and near the center of the load line. (Note: Use the datasheet for the 2N5209 transistor to make your calculations more accurate). Vcc = 10 V R1 Rc Cc2 Cci RL Vs R, REj = 499 Q Figure 1: Common-emitter amplifier for part #1
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