MAXIMUM RATINGSCASE 29-04, STYLE 1то-92 (TO-226AA)RatingSymbolValueUnitCollector-Emitter VoltageVCEO50VdcCollector-Base VoltageVсво50VdcEmitter-Base VoltageVEBO4.0VdcCollector Current – ContinuousIc50mAdcPDTotal Device Dissipation @ TA = 25°cDerate above 25°C625mW5.0mW/°CTotal Device Dissipation @ Tc = 25°CDerate above 25°CPD1.5Watts12mW/°COperating and Storage JunctionTemperature RangeTJ, Tstg- 55 to +150°CTHERMAL CHARACTERISTICSCharacteristicSymbolMaxUnitThermal Resistance, Junction toREJA200°C/WAmbientThermal Resistance, Junction to CaseROJC83.3°C/WELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)%3DCharacteristicSymbolMinМaxUnitOFF CHARACTERISTICSCollector-Emitter Breakdown VoltageV(BR)CEO50Vdc(Ic = 1.0 mAdc, Ig = 0)Collector-Base Breakdown VoltageV(BR)CBO50Vdc(Ic = 0.1 mAdc, lE = 0)Collector Cutoff CurrentICBO50nAc(VCB = 35 Vdc, IE = 0)Emitter Cutoff CurrentIEBO50nAdc(VEB = 3.0 Vdc, Ic = 0) Design a common-emitter amplifier to provide a small-signal voltage gain of approximately -10.1. Consider the circuit shown in Figure 1. Show the following calculations in yournotebook:Calculate a value for Rc so that A, z –10Calculate values for R1 and R2 so that the circuit is bias stable and near the centerof the load line.(Note: Use the datasheet for the 2N5209 transistor to make your calculations moreaccurate).Vcc = 10 VR1RcCc2CciRLVsR,REj = 499 QFigure 1: Common-emitter amplifier for part #1

Answered: Image /qna-images/answer/b10076a6-60b2-4486-84fc-432dba352775.jpg

Design a common-emitter amplifier to provide a small-signal voltage gain of approximately -10. 1. Consider the circuit shown in Figure 1. Show the following calculations in your notebook: Calculate a value for Rc so that A, z -10 Calculate values for R1 and R2 so that the circuit is bias stable and near the center of the load line. (Note: Use the datasheet for the 2N5209 transistor to make your calculations more accurate).

Design a common-emitter amplifier to provide a small-signal voltage gain of approximately -10. 1. Consider the circuit shown in Figure 1. Show the following calculations in your notebook: Calculate a value for Rc so that A, z -10 Calculate values for R1 and R2 so that the circuit is bias stable and near the center of the load line. (Note: Use the datasheet for the 2N5209 transistor to make your calculations more accurate).

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Why is there a difference in the beta value? (D. C) and the beta (A. C) value in some transistor output characteristic schemes.
solve it in less than 30 min pls.
1. To use the Bipolar Junction Transistor (BJT) as a small signal amplifier it must be biased in this region: A. South Park region B. Spatial interface region C. Inverse Thevenin region D. Linear or active region
Draw typical output characteristics of a common emitter npn transistor and clearly identify the active, saturation, and cut off regions on your drawing.
Question 6 A large signal circuit model for a MOSFET consists of a dependent current source in parallel with an output resistance, ro, where ro can be expressed as 1/1lp or VA/ID. True False
Subject : Electronics Engineering Draw and explain a small signal high frequency CE model of a transistor.
I need the answer quickly
For the p-channel JFET circuit in the Figure, the transistor parameters are: /oss = 2 mA, Vp = |1.75| V. (a) Determine Ipo and Vspo- (b) Give the small signal model (c) Determine the small-signal voltage gains Av = vo/vi QUESTION I: For the p-channel JFET circuit in the Figure, the transistor parameters are: Ioss = 2 mA, Vp = |1.75| V. (a) Determine Ipo and Vspo- (b) Give the small signal model (c) Determine the small-signal voltage gains Av = vo/vi VDD = 10 V Rg = 5 k£2 R1 = 90 kQ %3D Cc2 RL = 10 k2 R2 = 110 k2 ww
In the circuit given in the figure, Vcc = 15 V, R1 = R2 = 10kΩ, RE = 1KΩ, RL = 0.5kΩ and transistor parameters are given as VBE = 0.7V, ßdc = ß0 = 100. a. Calculate the values of DC bias currents and voltages (IBQ, ICQ and VCEQ). b. Draw the small signal equivalent circuit of the circuit using the hybrid model of the transistor. c. Derive the input impedance expression of the circuit and calculate its value. d. Derive the AVI and AVG voltage gain expressions and calculate their values. e. Derive the current gain expression AI = I0 / Ii and calculate its value. Compare this value you have calculated with the value you will calculate using the expression Aİ = Zi AVI / RL.
Q6. Determine small signal voltage gain if VCEO =4.5 V. Transistor parameters (NMOS): k, = 100 pA/V, VIN-1 v, and A= 0.01 V. Transistor parameters (BJT): B = 100, VaE(on)= 0.7 V, and VA=00. 10V 8V Yo -38.08 b. -47.48 Oc -56.84 d-77.54 -66.15 -30.57