I Homework 5 03042022.docx.pdf - Adobe ReaderFileEdit View Window Help| 477.3%Tools Fill & Sign CommentОpen3TSign In• Export PDF• Create PDFv Edit PDF3. A semiconductor of bar of length 8 µm and a cross-sectional area of 2 um2 is uniformly doped with donorswith much higher concentration than the intrinsicconcentration (101 cm³) such that ionized impurityscattering causes the majority carrier mobility to be afunction of doping Np (cm).(No acceptors or NA=0 cm³)Adobe Acrobat ProEasily edit text and images in PDFdocumentsStart Now• Combine PDF• Send Files• Store FilesNDUn= 800cm?/V-s1020ст-3The electron drift current for an applied voltage of160 V is 10 mA.(a) Calculate the doping concentration in the bar.(b) Calculate electron mobility due to ionized donorscattering.Hints:Convert um to cmCalculate electric filed, check if the sample is in thevelocity saturation region.Calculate Jn (drift) =q nno (saturation velocity)Assume saturation velocity = 10’ cm/sCalculate nno = ND12:00 AMType here to search23°CW08-Mar-22---II

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3. A semiconductor of bar of length 8 µm and a cross- sectional area of 2 µm² is uniformly doped with donors with much higher concentration than the intrinsic concentration (10" cm³) such that ionized impurity scattering causes the majority carrier mobility to be a function of doping Np (cm³). (No acceptors or NA=0 cm³) ND |1020 cm- Hn = 800 cm²/V-s The electron drift current for an applied voltage of 160 V is 10 mA. (a) Calculate the doping concentration in the bar. (b) Calculate electron mobility due to ionized donor scattering. Hints: Convert um to cm Calculate electric filed, check if the sample is in the velocity saturation region. Calculate Ja (drift) =q nao (saturation velocity) Assume saturation velocity = 107 cm/s Calculate n0 = Np O Ei

3. A semiconductor of bar of length 8 µm and a cross- sectional area of 2 µm² is uniformly doped with donors with much higher concentration than the intrinsic concentration (10" cm³) such that ionized impurity scattering causes the majority carrier mobility to be a function of doping Np (cm³). (No acceptors or NA=0 cm³) ND |1020 cm- Hn = 800 cm²/V-s The electron drift current for an applied voltage of 160 V is 10 mA. (a) Calculate the doping concentration in the bar. (b) Calculate electron mobility due to ionized donor scattering. Hints: Convert um to cm Calculate electric filed, check if the sample is in the velocity saturation region. Calculate Ja (drift) =q nao (saturation velocity) Assume saturation velocity = 107 cm/s Calculate n0 = Np O Ei

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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