1. An NMOS transistor has a threshold V₁ of 0.5 V when its source-to-substrate voltage is zero, given that the substrate is uniformly doped at 2E17 acceptor dopant atm/cm³ and the gate oxide capacitance is 3.5 fF/µm². a. Determine an expression for the threshold voltage as a function of source-to-substrate voltage. b. It is desired to obtain a threshold voltage of 1.0 volt at 0 volts source potential (with respect to ground). One method suggested by engineering team is to provide a separate bias supply for the substrate, in order to increase the source-to-substrate voltage. What value of Vx supply is needed? c. Rather than use of a separate substrate bias generator, another group in engineering is suggesting to use a threshold adjustment implant is the fabrication. Assuming the implant acts as a sheet charge in the oxide- silicon interface (via the term Qfc), what dose is needed to obtain VTN=1 volt at VSB=0? Would you use acceptor (NA) or donor (N₁) atoms?

1. An NMOS transistor has a threshold V₁ of 0.5 V when its source-to-substrate voltage is zero, given that the substrate is uniformly doped at 2E17 acceptor dopant atm/cm³ and the gate oxide capacitance is 3.5 fF/µm². a. Determine an expression for the threshold voltage as a function of source-to-substrate voltage. b. It is desired to obtain a threshold voltage of 1.0 volt at 0 volts source potential (with respect to ground). One method suggested by engineering team is to provide a separate bias supply for the substrate, in order to increase the source-to-substrate voltage. What value of Vx supply is needed? c. Rather than use of a separate substrate bias generator, another group in engineering is suggesting to use a threshold adjustment implant is the fabrication. Assuming the implant acts as a sheet charge in the oxide- silicon interface (via the term Qfc), what dose is needed to obtain VTN=1 volt at VSB=0? Would you use acceptor (NA) or donor (N₁) atoms?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

1.
An NMOS transistor has a threshold V₁ of 0.5 V when its source-to-substrate
voltage is zero, given that the substrate is uniformly doped at 2E17 acceptor
dopant atm/cm³ and the gate oxide capacitance is 3.5 fF/µm².
a. Determine an expression for the threshold voltage as a function of
source-to-substrate voltage.
b. It is desired to obtain a threshold voltage of 1.0 volt at 0 volts source
potential (with respect to ground). One method suggested by engineering
team is to provide a separate bias supply for the substrate, in order to
increase the source-to-substrate voltage. What value of Vx supply is
needed?
c. Rather than use of a separate substrate bias generator, another group in
engineering is suggesting to use a threshold adjustment implant is the
fabrication. Assuming the implant acts as a sheet charge in the oxide-
silicon interface (via the term Qfc), what dose is needed to obtain VTN=1
volt at VSB=0? Would you use acceptor (NA) or donor (ND) atoms?

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