A silicon (Si) npn bipolar transistor is doped with impurity concentrations of10° cm, 10" cm, and 106 cm in the emitter, base and collector,respectively. The lengths of the emitter and collector length are 1 um and thebase width is 500 nm. The device is operating at room temperature.(3) Determine the base current density in the transistor if the base emittervoltage VBs is forward biased with 0.5 V. Assume the base and emitterlengths are shorter than the diffusion length.(4) Explain why current gain is higher in npn transistors than in pnptransistors.(5) Sketch forward active lc vs. VE characteristics of the npn transistor asVae increases with equal increments of voltage (e.g. 400 mv, 450 mv,500 mv and 550 mV). You do not need to calculate values for collectorcurrent.

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Answered: (4) Explain why current gain is higher…

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(4) Explain why current gain is higher in npn transistors than in pnp transistors.

Introductory Circuit Analysis (13th Edition)

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ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

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Question

A silicon (Si) npn bipolar transistor is doped with impurity concentrations of
10° cm, 10" cm, and 106 cm in the emitter, base and collector,
respectively. The lengths of the emitter and collector length are 1 um and the
base width is 500 nm. The device is operating at room temperature.
(3) Determine the base current density in the transistor if the base emitter
voltage VBs is forward biased with 0.5 V. Assume the base and emitter
lengths are shorter than the diffusion length.
(4) Explain why current gain is higher in npn transistors than in pnp
transistors.
(5) Sketch forward active lc vs. VE characteristics of the npn transistor as
Vae increases with equal increments of voltage (e.g. 400 mv, 450 mv,
500 mv and 550 mV). You do not need to calculate values for collector
current.

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