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(4) Explain why current gain is higher in npn transistors than in pnp transistors.

(4) Explain why current gain is higher in npn transistors than in pnp transistors.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A silicon (Si) npn bipolar transistor is doped with impurity concentrations of 10° cm, 10" cm, and 106 cm in the emitter, base and collector, respectively. The lengths of the emitter and collector length are 1 um and the base width is 500 nm. The device is operating at room temperature. (3) Determine the base current density in the transistor if the base emitter voltage VBs is forward biased with 0.5 V. Assume the base and emitter lengths are shorter than the diffusion length. (4) Explain why current gain is higher in npn transistors than in pnp transistors. (5) Sketch forward active lc vs. VE characteristics of the npn transistor as Vae increases with equal increments of voltage (e.g. 400 mv, 450 mv, 500 mv and 550 mV). You do not need to calculate values for collector current.
Transcribed Image Text:A silicon (Si) npn bipolar transistor is doped with impurity concentrations of 10° cm, 10" cm, and 106 cm in the emitter, base and collector, respectively. The lengths of the emitter and collector length are 1 um and the base width is 500 nm. The device is operating at room temperature. (3) Determine the base current density in the transistor if the base emitter voltage VBs is forward biased with 0.5 V. Assume the base and emitter lengths are shorter than the diffusion length. (4) Explain why current gain is higher in npn transistors than in pnp transistors. (5) Sketch forward active lc vs. VE characteristics of the npn transistor as Vae increases with equal increments of voltage (e.g. 400 mv, 450 mv, 500 mv and 550 mV). You do not need to calculate values for collector current.
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