1° ⑤ Aa "Human-written solution required" 2. Using the characteristics of Fig. 6.11, determine ID for the following levels of VGs (with VDS > VP): a. VGs = 0V. b. VGs=-1 V. c. VGs -1.5 V. d. VGS -1.8 V. e. VGS = -4 V. f. VGs=-6V. 3. Using the results of problem 2 plot the transfer characteristics of ID vs. VGS- 4. a. Determine Vps for VGs = 0V and Ip = 6 mA using the characteristics of Fig. 6.11. b. Using the results of part (a), calculate the resistance of the JFET for the region Ip = 0 to 6 mA for VGs =0V. c. Determine Vps for VGS = -1 V and ID = 3 mA. d. Using the results of part (c), calculate the resistance of the JFET for the region ID = 0 to 3 mA for VGs -1 V. e. Determine Vps for VGs = -2 V and ID = 1.5 mA. f. Using the results of part (e), calculate the resistance of the JFET for the region ID = 0 to 1.5 mA for VGS-2 V. g. Defining the result of part (b) as ro, determine the resistance for VGs -1 V using Eq. (6.1) and compare with the results of part (d). h. Repeat part (g) for VGS = -2 V using the same equation, and compare the results with part (f). i. Based on the results of parts (g) and (h), does Eq. (6.1) appear to be a valid approximation? (mA) Locus of pinch-off values Ohmic Region Saturation Region DSS 8 7 6 5 4 3 2 VGS=0V. VGS=-1 V VGS=-2 V Vas--3V VGS-4V- 15 10 15 20 25 V(for Vas-0V) FIG. 6.11 V (V)

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1°
⑤
Aa
"Human-written solution required"
2. Using the characteristics of Fig. 6.11, determine ID for the following levels of VGs (with
VDS > VP):
a. VGs = 0V.
b. VGs=-1 V.
c. VGs -1.5 V.
d. VGS
-1.8 V.
e. VGS = -4 V.
f. VGs=-6V.
3. Using the results of problem 2 plot the transfer characteristics of ID vs. VGS-
4. a. Determine Vps for VGs = 0V and Ip = 6 mA using the characteristics of Fig. 6.11.
b. Using the results of part (a), calculate the resistance of the JFET for the region Ip = 0 to
6 mA for VGs =0V.
c. Determine Vps for VGS = -1 V and ID = 3 mA.
d. Using the results of part (c), calculate the resistance of the JFET for the region ID = 0 to
3 mA for VGs -1 V.
e. Determine Vps for VGs = -2 V and ID = 1.5 mA.
f. Using the results of part (e), calculate the resistance of the JFET for the region ID = 0 to
1.5 mA for VGS-2 V.
g. Defining the result of part (b) as ro, determine the resistance for VGs -1 V using
Eq. (6.1) and compare with the results of part (d).
h. Repeat part (g) for VGS = -2 V using the same equation, and compare the results with part (f).
i. Based on the results of parts (g) and (h), does Eq. (6.1) appear to be a valid approximation?
(mA)
Locus of pinch-off values
Ohmic
Region
Saturation Region
DSS 8
7
6
5
4
3
2
VGS=0V.
VGS=-1 V
VGS=-2 V
Vas--3V
VGS-4V-
15
10
15
20
25
V(for Vas-0V)
FIG. 6.11
V (V)
Transcribed Image Text:1° ⑤ Aa "Human-written solution required" 2. Using the characteristics of Fig. 6.11, determine ID for the following levels of VGs (with VDS > VP): a. VGs = 0V. b. VGs=-1 V. c. VGs -1.5 V. d. VGS -1.8 V. e. VGS = -4 V. f. VGs=-6V. 3. Using the results of problem 2 plot the transfer characteristics of ID vs. VGS- 4. a. Determine Vps for VGs = 0V and Ip = 6 mA using the characteristics of Fig. 6.11. b. Using the results of part (a), calculate the resistance of the JFET for the region Ip = 0 to 6 mA for VGs =0V. c. Determine Vps for VGS = -1 V and ID = 3 mA. d. Using the results of part (c), calculate the resistance of the JFET for the region ID = 0 to 3 mA for VGs -1 V. e. Determine Vps for VGs = -2 V and ID = 1.5 mA. f. Using the results of part (e), calculate the resistance of the JFET for the region ID = 0 to 1.5 mA for VGS-2 V. g. Defining the result of part (b) as ro, determine the resistance for VGs -1 V using Eq. (6.1) and compare with the results of part (d). h. Repeat part (g) for VGS = -2 V using the same equation, and compare the results with part (f). i. Based on the results of parts (g) and (h), does Eq. (6.1) appear to be a valid approximation? (mA) Locus of pinch-off values Ohmic Region Saturation Region DSS 8 7 6 5 4 3 2 VGS=0V. VGS=-1 V VGS=-2 V Vas--3V VGS-4V- 15 10 15 20 25 V(for Vas-0V) FIG. 6.11 V (V)
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