a) A silicon wafer is uniformly doped p-type with NA=10¹³/cm³. At T=0K, what are the equilibrium hole and electron concentrations?
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- A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AHere are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSEA designer will be using a silicon diode over a temperature range of 0 to 75 degree Celsius. What is the minimum and maximum values of barrier potential? (Assume 0.7V at room temperature is 25 degree Celsius).
- Given the relationship for semiconductor diode is : I = Io ( exp(eV/kT)-1). Proof the equation in case of PN junction.A one-sided abrupt silicon p-n junction diode is to be designed to have a breakdown voltage of at least 60 V and to have a forward-bias current of 50 mA for an applied voltage of 0.625 V while still operating under low injection. The minority carrier lifetimes are To = Tno = Tpo = 2 x 10-7 sec. Determine the doping concentrations and the minimum cross-sectional area.A thermal oxide of thickness 100 nm needs to be grown on a silicon wafer (100) in dry oxygen. If the process integration issue requires having a temperature not higher than 1150 C, determine the time required to obtain the desired thickness. The wafer is put back into the furnace and used with steam to obtain a total thickness of .5um. Calculate the time taken to obtain the additional thickness.
- The maximum electric field in a reverse - biased semiconductor p - n junction at T - 300K is to be | Emax = 1 * 10% V / cm. the doping concentrations are Nv = 1 * 10 'cm and Nx = 2x10 cm. Determine the reverse - bias voltage (in volt) that will produce this maximum electric field. Where n = 2.1 x 10 cm and, es - 12.9.Question 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junctionWhich statement(s) is (are) true about a P-N junction: A. P-N junction consists of n-type and p-type semiconductor materials.B. Free electrons in n-type diffuse across junction to p-type.C. A depletion region formation happens due to electrons and holes moving away from each other due to the electric field.
