Fundamentals of Heat and Mass Transfer
Fundamentals of Heat and Mass Transfer
7th Edition
ISBN: 9780470501979
Author: Frank P. Incropera, David P. DeWitt, Theodore L. Bergman, Adrienne S. Lavine
Publisher: Wiley, John & Sons, Incorporated
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Chapter 9, Problem 9.45P

At the end of its manufacturing process, a silicon wafer of diameter D = 150 mm , thickness δ = 1 mm , and emissivity is at an initial temperature of T i = 325 ° C and is allowed to cool in quiescent, ambient air and large surroundings for which T = T sur = 25 ° C .

Chapter 9, Problem 9.45P, At the end of its manufacturing process, a silicon wafer of diameter D=150mm , thickness =1mm , and

(a) What is the initial rate of cooling?
(b) How long does it take for the wafer to reach a temperature of 50°C? Comment on how the relative effects of convection and radiation vary with time during the cooling process.

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At the end of its manufacturing process, a silicon wafer of diameter d= 258 mm , thickness & =1 mm is at an initial temperature of 325 C and is allowed to cool in quiescent, ambient air and large surroundings for which T =T= 25 C, What is the initial rate of cooling by convection (kJ/s) from the Lower surface ONLY (Watts)? 3 Silicon :p= 2330 kg/m , c̟ = 813 J/kg K, k = 87.8 W/m · K. -6 Air: v = 32.15×10 m /s, k = 0.0372 W/m· K, a = 46.8 ×10 0.686, m /s, Pr = Quiescent air T Tsur Silicon wafer D, 8, e, T Select one:

Chapter 9 Solutions

Fundamentals of Heat and Mass Transfer

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