MASTERINGPHYSICS W/ETEXT ACCESS CODE 6
13th Edition
ISBN: 9781269542661
Author: YOUNG
Publisher: PEARSON C
expand_more
expand_more
format_list_bulleted
Question
Chapter 42, Problem 42.57PP
To determine
The correct statement that gives the best explanation for the temperature dependence of the current–voltage characteristics:
- a) The band gap is larger, so the electron–hole pairs have more energy, which causes the current at a given voltage to be larger.
- b) More electrons can move to the
conduction band, which causes the current at a given voltage to be larger. - c) All of the electrons in the valence band move to the conduction band, and the diode behaves like a metal and follows Ohm’s law.
- d) The acceptor and donor impurity atoms are free to move through the material, which causes the current at a given voltage to be larger.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Given below are two statements:
Statement I: PN junction diodes can be used to function as transistor, simply by connecting two diodes, back to back, which acts as the base terminal.
Statement II: In the study of transistor, the amplification factor β indicates ratio of the collector current to the base current.
In the light of the above statements, choose the correct answer from the options given below.
a. Statement I is false but Statement II is true.
b. Both Statement I and Statement II are true.
c. Statement I is true but Statement II is false.
d. Both Statement I and Statement II are false.
Please provide Handwritten answer
The formula for the contact potential of a pn-junction diode is given by the formula:
KT In (NaNa
a) This contact potential ensures that the net current across the junction is zero. Which side is higher
in electron potential energy – the n or the p-side? Briefly explain your answer.
b) Even though there is no net current across the pn-junction in equilibrium with no applied voltage
(V=0), there are two individual currents associated with electrons that add to zero (and two more
associated with holes) – drift and diffusion current. Explain what they are (and how they arise), and
give their direction (for electrons).
c) Which of the two types of current is independent of A¢o? Briefly explain why.
d) Arguing from the formula above for A$o, give a conceptual reason for the fact that germanium (Ge)
diodes have about half the contact potential compared to silicon (Si) diodes, all else being equal
(same doping concentrations and temperature). For a photodiode (PV cell), would you choose Si or…
Chapter 42 Solutions
MASTERINGPHYSICS W/ETEXT ACCESS CODE 6
Ch. 42.1 - If electrons obeyed the exclusion principle but...Ch. 42.2 - Prob. 42.2TYUCh. 42.3 - Prob. 42.3TYUCh. 42.4 - One type of thermometer works by measuring the...Ch. 42.5 - Prob. 42.5TYUCh. 42.6 - Prob. 42.6TYUCh. 42.7 - Suppose a negative charge is placed on the gate of...Ch. 42 - Van der Waals bonds occur in many molecules, but...Ch. 42 - Prob. 42.2DQCh. 42 - The H2+ molecule consists of two hydrogen nuclei...
Ch. 42 - The moment of inertia for an axis through the...Ch. 42 - Prob. 42.5DQCh. 42 - Prob. 42.6DQCh. 42 - Prob. 42.7DQCh. 42 - The air you are breathing contains primarily...Ch. 42 - Prob. 42.9DQCh. 42 - Prob. 42.10DQCh. 42 - What factors determine whether a material is a...Ch. 42 - Prob. 42.12DQCh. 42 - Prob. 42.13DQCh. 42 - Prob. 42.14DQCh. 42 - Prob. 42.15DQCh. 42 - Prob. 42.16DQCh. 42 - Prob. 42.17DQCh. 42 - Prob. 42.18DQCh. 42 - Prob. 42.19DQCh. 42 - Prob. 42.20DQCh. 42 - Prob. 42.21DQCh. 42 - Prob. 42.22DQCh. 42 - Prob. 42.23DQCh. 42 - Prob. 42.24DQCh. 42 - If the energy of the H2 covalent bond is 4.48 eV,...Ch. 42 - An Ionic Bond, (a) Calculate the electric...Ch. 42 - Prob. 42.3ECh. 42 - Prob. 42.4ECh. 42 - Prob. 42.5ECh. 42 - Prob. 42.6ECh. 42 - Prob. 42.7ECh. 42 - Two atoms of cesium (Cs) can form a Cs2 molecule....Ch. 42 - Prob. 42.9ECh. 42 - Prob. 42.10ECh. 42 - A lithium atom has mass 1.17 1026 kg, and a...Ch. 42 - Prob. 42.12ECh. 42 - When a hypothetical diatomic molecule having atoms...Ch. 42 - The vibrational and rotational energies of the CO...Ch. 42 - Prob. 42.15ECh. 42 - Prob. 42.16ECh. 42 - Prob. 42.17ECh. 42 - Prob. 42.18ECh. 42 - Prob. 42.19ECh. 42 - Prob. 42.20ECh. 42 - Prob. 42.21ECh. 42 - Prob. 42.22ECh. 42 - Prob. 42.23ECh. 42 - Prob. 42.24ECh. 42 - Prob. 42.25ECh. 42 - Prob. 42.26ECh. 42 - Prob. 42.27ECh. 42 - Prob. 42.28ECh. 42 - Prob. 42.29ECh. 42 - Prob. 42.30ECh. 42 - Prob. 42.31ECh. 42 - Prob. 42.32ECh. 42 - Prob. 42.33PCh. 42 - Prob. 42.34PCh. 42 - Prob. 42.35PCh. 42 - The binding energy of a potassium chloride...Ch. 42 - (a) For the sodium chloride molecule (NaCl)...Ch. 42 - Prob. 42.38PCh. 42 - Prob. 42.39PCh. 42 - Prob. 42.40PCh. 42 - Prob. 42.41PCh. 42 - Prob. 42.42PCh. 42 - Prob. 42.43PCh. 42 - Prob. 42.44PCh. 42 - Prob. 42.45PCh. 42 - Prob. 42.46PCh. 42 - Prob. 42.47PCh. 42 - Prob. 42.48PCh. 42 - Prob. 42.49PCh. 42 - Prob. 42.50PCh. 42 - Prob. 42.51PCh. 42 - Prob. 42.52PCh. 42 - Prob. 42.53CPCh. 42 - Prob. 42.54CPCh. 42 - Prob. 42.55CPCh. 42 - Prob. 42.56PPCh. 42 - Prob. 42.57PPCh. 42 - Prob. 42.58PP
Knowledge Booster
Similar questions
- The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?arrow_forwardThe measured density of a NaF crystal is 2.558 g/cm3 . What is the equilibrium separate distance of Na+ and Flions?arrow_forwardTo obtain a more clearly defined picture of the FermiDirac distribution, consider a system of 20 FermiDirac particles sharing 94 units of energy. By drawing diagrams like Figure P10.11, show that there are nine different microstates. Using Equation 10.2, calculate and plot the average number of particles in each energy level from 0 to 14E. Locate the Fermi energy at 0 K on your plot from the fact that electrons at 0 K fill all the levels consecutively up to the Fermi energy. (At 0 K the system no longer has 94 units of energy, but has the minimum amount of 90E.) 1 Microstate8 others? One of the nine equally probable microstates for 20 FD particles with a total energy of 94E.arrow_forward
- The formula for the contact potential of a pn-junction diode is given by the formula: NaNa kT - In e a) This contact potential ensures that the net current across the junction is zero. Which side is higher in electron potential energy – the n or the p-side? Briefly explain your answer. b) Even though there is no net current across the pn-junction in equilibrium with no applied voltage (V=0), there are two individual currents associated with electrons that add to zero (and two more associated with holes) – drift and diffusion current. Explain what they are (and how they arise), and give their direction (for electrons). c) Which of the two types of current is independent of Aøo? Briefly explain why.arrow_forwardThe figure below shows a portion of the energy band diagram of a p-n semiconductor junction. According to the situation shown in the figure, in the equilibrium condition, we can identify the currents as follows:(a) i1:electron diffusion current, i2:electron drift current, i3:hole diffusion current and i4:hole drift current. (b) i1:hole drift current, i2:electron drift current, i3:hole diffusion current and i4:electron diffusion current. (c) i1:hole diffusion current, i2:electron drift current, i3:hole drift current and i4:electron diffusion current. (d) i1:electron diffusion current, i2:electron diffusion current, i3:hole drift current and i4:hole drift current. (e) i1:hole drift current, i2:electron diffusion current, i3:hole diffusion current and i4:electron drift current.arrow_forwardRe 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? Specifyarrow_forward
- The figure below is a part of the energy band diagram of a P-type semiconductor bar under equilibrium conditions (i.e., EF is constant). The valence band edge is sloped because doping is nonuniform along the bar. Assume that Ev rises with a slope of ∆ ⁄ L .arrow_forwardJ: Choose an answer for the following items, The bonding among atoms in NaCl crystalline structure is i. ( (A) ionic. (B) metallic. (C) covalent. (D) Van der Waals. ii. For a BJT with VBg (0on) = 0.7 V and Vce (sat) = 0.3 V, the operation mode if Vgg = 1 V and Ver = 1 V is (A) cut off. (B) linear. (C) saturated. (D) reverse active. iii. (! or a step potential function at x = 0, the probability that a particle exists in the region x > 0 is (A) zero. (B) I. (C) larger than zero. (D) larger then 1. iv. potenual barrier. (A) lower than --., The forward applied bias voltage on the pn junction cannot be .. the built-in (B) greater than (C) equal to (D) twire v. ( -, If the lattice scattering is 3 cm /(V.S) and the ionized scattering is 4 cm /(V.S), then the total scattering is (A) 1.71 cm?/(V.S). (B) 7 cm/(V.S). (C) I cm/(V.S). (D) 0.58 cm/(V.S). ) The probability that an electron exists at the Fermi energy level is vi. (A) U.7. (В) 1. (C) zero. (D) 0.5. vii. The ratio of the effective…arrow_forwardexist is for valence electrons to "leap" into the conduction band with the Enoiteou Question 5 pplication of sufficient energy, legving a hole, or vacancy, behind in the valence band: Valence electron leaping into conduction band Conduction band valence band With sufficient thermal energy, these electron-hole pairs will form spontaneously. Af room temperature, however, this activity is slight. we may greatly enhance charge carrier formation by adding specific impurities to the semiconducting material. The energy states of atoms having different electron configurations do not precisely "blend" with the electron bands of the parent semiconductor crystal, causing additional energy levels to form. Some types of impurities will cause extra donor electrons to lurk just beneath the main conduction band of the crystal. These types of impurities are called pentavalent, because they have 5 valence electrons per atom rather than 4 as the parent substance typically possesses: Doped with a…arrow_forward
- Suppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1 at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of electrons/holes in silicon at different doping concentrations under different temperature is shown in the following figure. 0.1 102 102 10, 10 0.01 0.01 A kgou aoarrow_forwardquestion 8arrow_forwardAn n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage LearningUniversity Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
- Glencoe Physics: Principles and Problems, Student...PhysicsISBN:9780078807213Author:Paul W. ZitzewitzPublisher:Glencoe/McGraw-Hill
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax
Glencoe Physics: Principles and Problems, Student...
Physics
ISBN:9780078807213
Author:Paul W. Zitzewitz
Publisher:Glencoe/McGraw-Hill