Physics for Scientists and Engineers with Modern Physics
4th Edition
ISBN: 9780131495081
Author: Douglas C. Giancoli
Publisher: Addison-Wesley
expand_more
expand_more
format_list_bulleted
Question
Chapter 40.8, Problem 1DE
To determine
Find the impurity atom which produce p-type semiconductor.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Pls help ASAP
At T=300K, the electron concentration of a semiconductor material
is n, = 10" cm*. The bandgap energy E=1.leV, Nc =2.8×10" cm, and
N, =1.0x10" cm³.
(1) Determine the hole concentration P. . Is this n-type or p-type
semiconductor?
(2) Determine E F – EF ;
(3) What is the dopant concentration, N, or .? (Please evaluate N, or N.)
5. Please select the correct answer:
(a) Acceleration of a free electron and its collision with the host atoms and
ionize them in solid, which leads to electron avalanche breakdown.
(b) The flow of a substantial current between the electrodes, which appears as a (II) Dielectric strength
short between the electrodes when the voltage across a dielectric material
exceeds from a critical voltage.
(c) The gradual growth of microstructural voids, cracks, or pores within the
dielectric due to partial discharge, which leads to electrical tree type of
discharge.
(d) The maximum field that can be applied to an insulating medium without
causing dielectric breakdown.
(I) Dielectric breakdown
(III) Intrinsic Breakdown
(IV) Internal Discharges
Chapter 40 Solutions
Physics for Scientists and Engineers with Modern Physics
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
Knowledge Booster
Similar questions
- Find a GaAs Hall element from web (specify Ic and VH).arrow_forward1. The energy of an electron in the valence band of a semiconductor is described by E = - Ak? where the value of A is 10-37 J m2, with E in J and k in m-1. When an electron is removed from the state k = 10°k, m-1, calculate: (a) the effective mass; (b) the momentum; (c) and the velocity of the resultant hole.arrow_forward(i) The total electrical resistivity of metals is the sum of the contributions from thermal vibrations, impurities and plastic deformation; (ii) the resistivity rises linearly with temperature above -200 degree Celsius; (iii) increasing the concentration of impurity results in an enhancement of impurity; (iv) plastic deformation also raises the electrical resistivity due to the increased numbers of electron-scattering dislocations. Which of the above statements is false? D. (iv) A. (i) C. (iii) E. All of the above B. (ii) Other:arrow_forward
- 7. Consider a silicon pn-junction at T= 300 K. The reverse-saturation current Is is 1014 A. Determine the ratio of the current amplitudes, Ip(0.6 Vy Ip(0.4 V), when the forward bias increases from 0.4 V and 0.6 V. (a) 3 (b) 30 (c) 47 (d) 228 (e) 500arrow_forwardsilicon has electron concentration, no = 3x1016 cm3 and n; =1.5 x 1010 cm-3; at T=350 K. (a) Determine Po. (b) Is this material n or p type? (c) Determine E-EF.arrow_forwardUSE KVL AND KCL.....arrow_forward
- (3) In an n-tpye semiconductor for the given linear variation doping concentration of Na (x) = 1016 – 1019 x (cm3) (a) Derive the induced field E(x) and calculate E max at T = 37 °C. (b) Calculate the potential difference between x = 0 and x =2 um at T = 37 °C. Note: E(x) = - [dT/Na(x)][dNa(x)/dx], T= kT/earrow_forwardA sample of silicon is uniformly 8 points doped with (10^16) arsenic atoms per cm-3 and 5x(10^15) boron atoms per cm-3. Using this information and assuming ni is (10^10) cm-3. at 300K determine the following items for this sample: a- The type (n or p).b- The majority carriers concentration.c- The minority carriers concentration. O n-type ; 5*(10^15) cm-3; 10000 cm-3 p-type ; 5*(10^15) cm-3; 10000 cm-3 n-type ; 10000 cm-3; 5*(10^15) cm-3 pure-type ; 10000 cm-3; 5*(10^15) cm-3 O Other:arrow_forwardIn a p-type semiconductor with a defect-rich surface the surface recombination velocity is 104 cm/s. (i) draw a schematic figure illustrating how the surface recombination flux changes with input light intensity; (ii) How does the surface recombination flux change with doping level?arrow_forward
- (a) Show that the resistivity of intrinsic germanium at 300 °K is 0.45 2.m if n₁ = 2.5×10¹⁹ m²³, n = 0.38 m²/V.s, p = 0.18 m²/v.s. -3 (b) If a donor-type impurity added to the extent of 1 atom per 108 germanium atoms, prove that the resistivity drops to 0.037 2.m. Density = 5.32x10³ Kg/m³, atomic weight 72.6.arrow_forward1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.arrow_forwardSince the reverse (saturation) current passing through a p-n junction with an ideality factor of 1 at 32°C is 50 nA; What is the current in the right direction at a voltage of 0.5 V applied in the right (conduct) direction (feed forward)? A) 8.98 A B) 6.68 A C) 4.18 A D) 1.25 Aarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStaxGlencoe Physics: Principles and Problems, Student...PhysicsISBN:9780078807213Author:Paul W. ZitzewitzPublisher:Glencoe/McGraw-HillPhysics for Scientists and Engineers with Modern ...PhysicsISBN:9781337553292Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
- Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax
Glencoe Physics: Principles and Problems, Student...
Physics
ISBN:9780078807213
Author:Paul W. Zitzewitz
Publisher:Glencoe/McGraw-Hill
Physics for Scientists and Engineers with Modern ...
Physics
ISBN:9781337553292
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning