MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
Question
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Chapter 3, Problem 3.47P

a.

To determine

The width to length ratio of the transistors to meet the requirements.

a.

Expert Solution
Check Mark

Answer to Problem 3.47P

  (WL)1=2.315 , (WL)2=1.585 , (WL)3=3.693

Explanation of Solution

Given Information:

The given values are:

  VTN=0.6 V, kn'=120 μA/V2, IDQ=0.8 mA,  V1=2.5 V, V2=6 V

The given circuit is shown below.

  MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL), Chapter 3, Problem 3.47P , additional homework tip  1

Calculation:

The voltage is,

  VGS3=V1=2.5 V

Also,

  VGS2=V2V1=62.5=3.5 V

And,

  VGS1=V+V2=96=3 V

Then the constant current is

  IDQ=kn'2(WL)1(VGS1VTN)2(WL)1=2IDQkn'(VGS1VTN)2=2×0.80.12(30.6)2=2.315

Similarly,

  IDQ=kn'2(WL)2(VGS2VTN)2(WL)2=2IDQkn'(VGS2VTN)2=2×0.80.12(3.50.6)2=1.585

And,

  IDQ=kn'2(WL)3(VGS3VTN)2(WL)3=2IDQkn'(VGS3VTN)2=2×0.80.12(2.50.6)2=3.693

b.

To determine

The change in the output voltages for the kn' parameter change.

b.

Expert Solution
Check Mark

Answer to Problem 3.47P

When kn'=120×1.05=126 μA/V2

  V1=2.5 V , V2=6 V

When kn'=120×0.95=114 μA/V2

  V1=2.5 V , V2=6 V

Explanation of Solution

Given Information:

The given values are:

  VTN=0.6 V, kn'=120 μA/V2, IDQ=0.8 mA,  V1=2.5 V, V2=6 V

The given circuit is shown below.

  MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL), Chapter 3, Problem 3.47P , additional homework tip  2

Parameter kn' changes by +5% and 5%

Calculation:

When there is a change in kn' for all transistors with the same percentage, then it will change current through each transistor which is equal in all transistors. According to the below equation, there is no change in VGSQ . So, there is no effect on output voltages V1  and V2 .

  IDQ=kn'2(WL)(VGSQVTN)2

From part (a), (WL)1=2.315 , (WL)2=1.585 , (WL)3=3.693

For each case, kn'=kn1'=kn2'=kn3'

Then,

  ID2=ID3kn2'2(WL)2(VGS2VTN)2=kn3'2(WL)3(VGS3VTN)21.585(V2V10.6)2=3.693(V10.6)2V2=2.526V10.3156(1)

Also,

  ID1=ID3kn1'2(WL)1(VGS1VTN)2=kn3'2(WL)3(VGS3VTN)22.315(9V20.6)2=3.693(V10.6)2

Substituting equation (1)

  2.315(9.31562.526V10.6)2=3.693(V10.6)22.315(9.31562.526V10.6)2=3.693(V10.6)2(9.31562.526V10.6)=1.263(V10.6)V1=9.47343.789 V

  V1=2.5 V

From equation (1),

  V2=2.526×2.50.3156

  V2=6 V

So,

When kn'=kn1'=kn2'=kn3'120×1.05=126 μA/V2

  V1=2.5 V , V2=6 V

When kn'=kn1'=kn2'=kn3'=120×0.95=114 μA/V2

  V1=2.5 V , V2=6 V

c.

To determine

The output voltages for a specified change in each transistor.

c.

Expert Solution
Check Mark

Answer to Problem 3.47P

  V1=2.468 V , V2=5.919 V

Explanation of Solution

Given Information:

The given values are:

  VTN=0.6 V, kn'=120 μA/V2, IDQ=0.8 mA,  V1=2.5 V, V2=6 V.

The given circuit is shown below.

  MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL), Chapter 3, Problem 3.47P , additional homework tip  3

Also, kn' parameter of M1 decreases by 5% while kn' parameter of M2 and M3 increases by 5%.

Calculation:

When there is a change in kn' for all transistors with the different percentages for transistors, the current through transistors must be equal so that according to the below equation, there may be a change in VGSQ for each transistor. So that output voltages V1  and V2 will change.

  IDQ=kn'2(WL)(VGSQVTN)2

For M1 :

  kn1'=120×0.95=114 μA/V2

Now for M2 and M3 :

  kn2'=kn3'=120×1.05=126 μA/V2

From part(a), (WL)1=2.315 , (WL)2=1.585 , (WL)3=3.693

Then,

  ID2=ID3kn2'2(WL)2(VGS2VTN)2=kn3'2(WL)3(VGS3VTN)2

  1.585(V2V10.6)2=3.693(V10.6)2V2=2.526V10.3156(1)

Also,

  ID1=ID3kn1'2(WL)1(VGS1VTN)2=kn3'2(WL)3(VGS3VTN)21142×2.315(9V20.6)2=1262×3.693(V10.6)2

Substituting equation (1)

  1142×2.315(9.31562.526V10.6)2=1262×3.693(V10.6)21142×2.315(9.31562.526V10.6)2=1262×3.693(V10.6)2(9.31562.526V10.6)=1.32784(V10.6)V1=9.5123043.85384 V

  V1=2.468 V

From equation (1),

  V2=2.526×2.4680.3156

  V2=5.919 V

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Chapter 3 Solutions

MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)

Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
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