MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
expand_more
expand_more
format_list_bulleted
Textbook Question
Chapter 3, Problem 13RQ
Describe the basic operation of a junction FET.
Expert Solution & Answer

Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Prelab Information
Laboratory Preliminary Discussion
Second-order RLC Circuit Analysis
The second-order RLC circuit shown in figure 1 below represents all voltages and impedances as functions of the complex
variable, s. Note, of course, that the impedances associated with R, RL, and Rs are constant independent of frequency, so the 's'
notation is omitted. Again, one of the advantages of s-domain analysis is that we can apply all of the circuit analysis techniques
learned for AC and DC circuits.
ZI(s)
Zc(s)
Rs
w
RL
ww
+
+
VRS(S)
VRL(S)
VL(s)
Vc(s)
VR(S)
R
Vs(s)
Figure 1: A second-order RLC circuit represented in the s-domain.
To generate the s-domain expression for the output voltage, Vout(s) = VR(S), for the circuit shown in figure 1, we can apply voltage
division in the s-domain as shown in equation 1 below. For equation 1 we define the following circuit parameters.
RT=RS + RL + R where: R₁ = Total series resistance
Rs Signal generator output resistance (fixed)
Inductor internal…
Can you show how the correct answer was found.
For the circuit shown in Figure (1). Solve the following: (
A. What type of logic does it represent?
C. Explain the function of D1.
B. What type of logic family does it belong to?
D. Explain the importance of DL.
E. How many stages it has? Explain the function of each one.
F. Construct the truth table and explain it briefly.
G.How can you convert this circuit to an open collector form? Explain and sketch it.
H.How can you convert this circuit to a tri-state form? Explain and sketch it.
I. How can you prevent the transistors from being saturated?
J. Which transistor should be modified to convert this circuit to a 4-inputs NAND?
Explain and sketch it.
K.Convert this circuit to a 2-inputs NOR gate and draw it.
R-1200
R-4.2K
R-1.5K
R-IK
Figure (1)
lour
e Your
Chapter 3 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- E. How many stages it has? Explain the function of each one. F. Construct the truth table and explain it briefly. G.How can you convert this circuit to an open collector form? Explain and sketch it. H.How can you convert this circuit to a tri-state form? Explain and sketch it. I. How can you prevent the transistors from being saturated? J. Which transistor should be modified to convert this circuit to a 4-inputs NAND? Explain and sketch it. K.Convert this circuit to a 2-inputs NOR gate and draw it. R-4.2K W R-1200 R-1.5K R-IK Figure (1) JOUT e Yourarrow_forward1. Determine the z-transform, including the region of convergence (ROC), of the following signals: a)x[n={3,0,0,0,0,51-4} b) x2[n] = ((1/3)^n ,n ≥0 2", n < 0 c) X3[n]= (1/3)^n- 2", n ≥ 0 0, n < 0arrow_forwardUse ECL configuration to realize a 2-inputs OR /NOR gate and verify its function using the truth table, showing the state of each transistor in the circuit. Assume Vcc 5V, VEE-0V & VREF=1.5V.arrow_forward
- Twenty-five signals, ten of them have 3.4 kHz bandwidth, the other have bandwidth of 5 kHz are FDM/TDM multiplexed then modulated by an RF carrier of 800 kHz using AM modulator: Calculate minimum multiplexing and transmission bandwidths. Calculate the guard band (BWGuard) to be added between each two signals and below the first one to result a multiplexing bandwidth of 131.5 kHzarrow_forwardAn FDM is used to multiplex two groups of signals using AM-SSB, the first group contains 25 speech signals, each has maximum frequency of 4 kHz, the second group contains 15 music signals, each has maximum frequency of 10 kHz. A guard bandwidth of 500 Hz is used between each two signals and before the first one. 1. Find the BWmultiplexing 2. Find the BWtransmission if the multiplexing signal is modulated using AM-DSB-LC.arrow_forwardA single tone is modulated using FM transmitter. The SNR; at the input of the demodulator Is 20 dB. If the maximum frequency of the modulating signal is 4 kHz, and the maximum frequency deviation is 12 kHz, find the SNR, and the bandwidth (using Carson rule) at the following conditions: 1. For the given values of fm and Af. 2. If the amplitude of the modulating signal is increased by 80%. 3. If the amplitude of the modulating signal is decreased by 50%, and frequency of modulating signal is increased by 50%.arrow_forward
- FM station of 100 MHz carrier frequency modulated by a 20 kHz sinusoid with an amplitude of 10 volt, so that the peak frequency deviation is 25 kHz determine: 1) The BW of the FM signal. 2) The approximated BW if the modulating signal amplitude is increased to 50 volt. 3) The approximated BW if the modulating signal frequency is increased by 70%. 4) The amplitude of the modulating signal if the BW is 65 kHz.arrow_forwardb) The joint probability function for the random variables X and Y is given in Table below. Find a) the marginal probability function of X and Y. P(Y/X) and P(X/Y). c) P(X ≥ 2, Y ≤ 2) y 1 2 3 10.05 0.05 0.1 P(X, Y) = X 20.05 0.1 0.35 3 0 0.2 0.1arrow_forwardSuppose a random variable X as pmf / Px (x) = { %, x = 1, 2, 3, 0, otherwise. find constand c ①P(X = 1), P(X 7,2), PC1 3) C CDFarrow_forward
- Suppose that a coin is tossed three so that the sample space is Let X represent the number of heads that can come up. i) Find the probability function corresponding to the random variable X. Assuming that the coin is fair ii) Find the distribution function for the random variable X. iii) Obtain its graph.arrow_forwardQ9 A single-phase transformer, 2500 / 250 V, 50 kVA, 50 Hz has the following parameters, the Primary and secondary resistances are 0.8 ohm and 0.012 ohm respectively, the primary and secondary reactance are 4 ohm and 0.04 ohm respectively and the transformer gives 96% maximum efficiency at 75% full-load. The magnetizing component of-load current is 1.2 A on 2500 V side. 1- Draw the equivalent circuit referred to primary (H.V side) and inserts all the values in it 2- Find out Ammeter, voltmeter and wattmeter readings on open-circuit and short-circuit test. If supply is given to 2500 V side in both cases. Ans. O.C. Test (Vo= 2500 V, lo=1.24 A, Wo=781.25 w) S.C. Test (Vsc =164.924 V, Isc =20 A, Wsc =800 w )arrow_forwardQ2-A)- Enumerate the various losses in transformer. Explain how each loss varies with (Load current, supply voltage). B)- Draw the pharos diagram at load on primary side.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,

Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON

Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning

Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education

Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education

Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON

Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License