A single-phase, 50-kVA, 2400/240-V, 60-Hz distribution transformer has the following parameters: Resistance of the 2400-V winding: R 1 = 0.75 Ω Resistance of the 240-V winding: R 2 = 0.0075 Ω Leakage reactance of the 2400-V winding: X 1 = 1.0 Ω Leakage reactance of the 240-V winding: X 2 = 0.01 Ω Exciting admittance on the 240-V side = 0.00 3 − j 0.0 2 S (a) Draw the equivalent circuit referred to the high-voltage side of the transformer. (b) Draw the equivalent circuit referred to the low-voltage side of the transformer. Show the numerical values of impedances on the equivalent circuits.
A single-phase, 50-kVA, 2400/240-V, 60-Hz distribution transformer has the following parameters: Resistance of the 2400-V winding: R 1 = 0.75 Ω Resistance of the 240-V winding: R 2 = 0.0075 Ω Leakage reactance of the 2400-V winding: X 1 = 1.0 Ω Leakage reactance of the 240-V winding: X 2 = 0.01 Ω Exciting admittance on the 240-V side = 0.00 3 − j 0.0 2 S (a) Draw the equivalent circuit referred to the high-voltage side of the transformer. (b) Draw the equivalent circuit referred to the low-voltage side of the transformer. Show the numerical values of impedances on the equivalent circuits.
Solution Summary: The author illustrates the circuit referred to the high voltage side of transformer. The value of exciting admittance is given as l
A single-phase,
50-kVA, 2400/240-V, 60-Hz
distribution transformer has the following parameters:
Resistance of the 2400-V winding:
R
1
=
0.75
Ω
Resistance of the 240-V winding:
R
2
=
0.0075
Ω
Leakage reactance of the 2400-V winding:
X
1
=
1.0
Ω
Leakage reactance of the 240-V winding:
X
2
=
0.01
Ω
Exciting admittance on the 240-V side
=
0.00
3
−
j
0.0
2 S
(a) Draw the equivalent circuit referred to the high-voltage side of the transformer.
(b) Draw the equivalent circuit referred to the low-voltage side of the transformer. Show the numerical values of impedances on the equivalent circuits.
Draw the fabrication layers of a transistor with MS junction (Schottky junction).
Q: Draw the fabrication layers of a transistor with MS junction (Schottky
junction).
+
C/E,
4
TA
b
IA
+ 2V
C/E
2
+1
-
C
+ V3 -
C/EU
-
ча
- V4 +
e
+
/E3 V2
12V
a
(a) Find currents L, L2 and is
(b)
Find Voltages V, V2, V3 and V4
-
2A
CIEG
For each circuit element and the two sources state whether they are
ABSORBING SUPPLYING pores and how much poner 13 absorbed
or supplied.
+
Chapter 3 Solutions
MindTap Engineering for Glover/Overbye/Sarma's Power System Analysis and Design, 6th Edition, [Instant Access], 1 term (6 months)
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