During the initial stages of the growth of the nanowire of Problem 3.109, a slight perturbation of the liquid catalyst droplet can cause it to be suspended on the top of the nanowire in an off-center position. The resulting nonuniform deposition of solid at the solid-liquid interface can be manipulated to form engineered shapes such as a nanospring, that is characterized by a spring radius r. spring pitch s, overall chord length L c (length running along the spring), and end-to-end length L as shown in the sketch. Consider a silicon carbide nanospring of diameter D = 15 nm, r = 30 nm, s = 25 nm, and L c = 425 nm . From experiments, it is known that the average spring pitch s ¯ varies with average temperature T ¯ by the relation d s ¯ / d T ¯ = 0.1 nm/K . Using this information, a student suggests that a nanoactuator can be constructed by connecting one end of the nanospring to a small heater and raising the temperature of that end of the nano spring above its initial value. Calculate the actuation distance Δ L for conditions where h = 10 6 W/m 2 ⋅ K, T ∞ = T i = 25 ° C, with a basetemperature of T b = 50 ° C . If the base temperature can be controlled to within 1 ° C, calculate the accuracy to which the actuation distance can be controlled. Hint: Assume the spring radius does not change when the spring is heated. The overall spring length may be approximated by the formula, L = s ¯ 2 π L c r 2 + ( s ¯ / 2 π ) 2
During the initial stages of the growth of the nanowire of Problem 3.109, a slight perturbation of the liquid catalyst droplet can cause it to be suspended on the top of the nanowire in an off-center position. The resulting nonuniform deposition of solid at the solid-liquid interface can be manipulated to form engineered shapes such as a nanospring, that is characterized by a spring radius r. spring pitch s, overall chord length L c (length running along the spring), and end-to-end length L as shown in the sketch. Consider a silicon carbide nanospring of diameter D = 15 nm, r = 30 nm, s = 25 nm, and L c = 425 nm . From experiments, it is known that the average spring pitch s ¯ varies with average temperature T ¯ by the relation d s ¯ / d T ¯ = 0.1 nm/K . Using this information, a student suggests that a nanoactuator can be constructed by connecting one end of the nanospring to a small heater and raising the temperature of that end of the nano spring above its initial value. Calculate the actuation distance Δ L for conditions where h = 10 6 W/m 2 ⋅ K, T ∞ = T i = 25 ° C, with a basetemperature of T b = 50 ° C . If the base temperature can be controlled to within 1 ° C, calculate the accuracy to which the actuation distance can be controlled. Hint: Assume the spring radius does not change when the spring is heated. The overall spring length may be approximated by the formula, L = s ¯ 2 π L c r 2 + ( s ¯ / 2 π ) 2
Solution Summary: The author explains the actuation distance and the accuracy to which it can be controlled.
During the initial stages of the growth of the nanowire of Problem 3.109, a slight perturbation of the liquid catalyst droplet can cause it to be suspended on the top of the nanowire in an off-center position. The resulting nonuniform deposition of solid at the solid-liquid interface can be manipulated to form engineered shapes such as a nanospring, that is characterized by a spring radius r. spring pitch s, overall chord length
L
c
(length running along the spring), and end-to-end length L as shown in the sketch. Consider a silicon carbide nanospring of diameter
D
=
15
nm,
r
=
30
nm,
s
=
25
nm,
and
L
c
=
425
nm
.
From experiments, it is known that the average spring pitch
s
¯
varies with average temperature
T
¯
by the relation
d
s
¯
/
d
T
¯
=
0.1
nm/K
.
Using this information, a student suggests that a nanoactuator can be constructed by connecting one end of the nanospring to a small heater and raising the temperature of that end of the nano spring above its initial value. Calculate the actuation distance
Δ
L
for conditions where
h
=
10
6
W/m
2
⋅
K,
T
∞
=
T
i
=
25
°
C,
with a basetemperature of
T
b
=
50
°
C
.
If the base temperature can be controlled to within
1
°
C,
calculate the accuracy to which the actuation distance can be controlled. Hint: Assume the spring radius does not change when the spring is heated. The overall spring length may be approximated by the formula,
An electrical resistance wire made of tungsten dissipates heat to the surroundings at a constant rate.
Which of the following equations are you going to use to compute for the temperature at any point
within the wire when the temperature throughout the whole wire no longer changes with time? Assume
that the wire can be approximated as a thin cylinder.
a. Fourier-Biot equation
b. Poisson equation
c. Diffusion equation
d. Laplace equation
Please show all step, not Ai generated.
One way to manufacture transistors, which amplify electricalsignals, is to diffuse impurity atoms into a semiconductormaterial such as silicon. Suppose a silicon wafer 0.1 cm thick,which originally contains 1 phosphorous (P) atoms for every 10million Si atoms, is treated so that there are 400 P atoms forevery 10 million Si atoms at the surface. Calculated theconcentration gradient (a) in atomic percent/cm and (b) inatoms/cm 3 ·cm. The lattice parameter of silicon is 5.4307 Å.Hint: Silicon isin a diamond cubicStructure with8 atoms/cell.
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