Manufacturing Engineering & Technology
7th Edition
ISBN: 9780133128741
Author: Serope Kalpakjian, Steven Schmid
Publisher: Prentice Hall
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Chapter 28, Problem 31QTP
To determine
During processing sequence of three silicon
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2. In lithography process, you are asked to deposit nanoparticle in holes. Select the process steps in order.
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A metal
elching
Substrate
After development
SHiping
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of resist
deposited in holes
wetChem cal)
(a) Striping resist Deposition of nanomaterial -Etching
(b) Etching - Deposition of nanomaterial Striping resist
(c) Deposition of nanomaterial- Striping resist Etching
Cmone
What are valid reasons for adding Yttrium to the zirconia in the Thermal Barrier Coating (TBC) in a turbine blade?
Select one or more:
a.
To match the thermal conductivity of the TBC to the metal substrate
b.
To increase the weight of the TBC
c.
To prevent a change of the crystallographic structure as the temperature changes
d.
To match the thermal conductivity of the TBC to the underlying oxide layer
e.
To avoid breakage during change in thermal conditions
Does Czochralski crystal growth the only method for Si wafer production? What is the max. pull rate to obtain a 12-inch diameter Ge wafer
Chapter 28 Solutions
Manufacturing Engineering & Technology
Ch. 28 - Define the terms wafer, chip, die, device,...Ch. 28 - Why is silicon the semiconductor most used in...Ch. 28 - What do the abbreviations BJT, MOSFET, VLSI,...Ch. 28 - Prob. 4RQCh. 28 - Prob. 5RQCh. 28 - What are the purposes of prebaking and...Ch. 28 - Define selectivity and isotropy, and their...Ch. 28 - Prob. 8RQCh. 28 - Prob. 9RQCh. 28 - What are the levels of interconnection?
Ch. 28 - Which is cleaner, a Class-10 or a Class-1 clean...Ch. 28 - Prob. 12RQCh. 28 - What is a via? Why is it important?Ch. 28 - Describe how electrical connections are...Ch. 28 - Prob. 15RQCh. 28 - Prob. 16RQCh. 28 - Comment on your observations regarding the...Ch. 28 - Describe how n-type and p-type dopants differ.Ch. 28 - Prob. 19QLPCh. 28 - How is epitaxy different from other techniques...Ch. 28 - Note that, in a horizontal epitaxial reactor...Ch. 28 - The table that follows describes three...Ch. 28 - Prob. 23QLPCh. 28 - What is accelerated life testing? Why is it...Ch. 28 - Explain the difference between a die, a chip, anda...Ch. 28 - A common problem in ion implantation is...Ch. 28 - Examine the hole profiles shown in Fig. P28.27...Ch. 28 - Referring to Fig. 28.24, sketch the shape of the...Ch. 28 - Prob. 29QTPCh. 28 - Prob. 30QTPCh. 28 - Prob. 31QTPCh. 28 - A certain design rule calls for metal lines to be...Ch. 28 - Prob. 33QTPCh. 28 - If a square mask of side length 100 m is placed on...Ch. 28 - Obtain an expression for the width of the trench...Ch. 28 - Prob. 36SDPCh. 28 - Inspect various electronic and computer equipment,...Ch. 28 - Describe your understanding of the important...Ch. 28 - Make a survey of the necessity for clean rooms in...Ch. 28 - Prob. 40SDPCh. 28 - Prob. 41SDPCh. 28 - Estimate the time required to etch a spur gear...Ch. 28 - Prob. 43SDPCh. 28 - Review the specific devices, shown in Fig. V.2....
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- A siilicon boule has been processed through grinding to provide a cylinder whose diameter = 281 mm and whose length = 899 mm. Next, it will be sliced into wafers 0.8 mm thick using a cut-off saw with a kerf = 0.5 mm. The wafer thus produced will be used to fabricate as many IC chips as possible for the personal computer market. Each IC has a market value to the company of $108. Each chip is square with 17 mm on a side. The processable area of each wafer is defined by a diameter = 265 mm. Estimate the value of all of the IC chips that could be produced (in $), asssuming an overall yield of 84% good product.arrow_forwardAnswer each of the following questions in one to three sentences. (a) What is lithography field? (b) What is misalignment in lithography? (e) What is selectivity in an etching process? (d) What is end-point detection in an etching process?arrow_forwardDiffusion of reactant atoms/molecules take place during the formation of silicon oxide. A. What is characteristic for the diffusion of these processes? B. What is the thickness of silicon lost during the formation of 2 um of SiO2?arrow_forward
- In the appendices, the modulus of elasticity for silicon nitride is 304 GPa (that of steel is 207 GPa). How much porosity could be present in the round bar of silicon nitride such that it equals the reported value for steel?arrow_forwardWhat are valid reasons for adding Yttrium to the zirconia in the Thermal Barrier Coating (TBC) in a turbine blade? Select one or more: a. To increase the weight of the TBC b. To match the thermal conductivity of the TBC to the underlying oxide layer To avoid breakage during change in thermal conditions d. To prevent a change of the crystallographic structure as the temperature changes To match the thermal conductivity of the TBC to the metal substrate C. e.arrow_forwardA is the simplest type of semiconductor.arrow_forward
- Rj gandhiarrow_forward4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2. (a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂ sidewalls after 5 minutes of etching. 0.lum oxide 1 um 0.7um Poly-Si I photoresist 0.5 umarrow_forwardFor a given 40 cm diameter wafer, and a die that is 1.5 cm x 2 cm, determine the cost of a die. Wafer cost is $5800, wafer yield is 100%, and defects per unit area is 0.09/sq. cm.arrow_forward
- Show complete and detailed solutions. Write legibly. View Image.arrow_forwardInstructions: Assign oxidation numbers for each individual atom in all of the substances below by writing the ON above the atom, and write the oxidizing and reducing agents in the space provided. Remember: agents are always the entire substance, including charge if it's an ion! Fe3*(ag) + Sn2*(ag) → Fe2*(ag) + Snt(a Ox agent: Red agent: 1. (aq) → Fe2+ "(aq) + Sn**(ag) HNO2(ag) + MnO4 (ag) → Mn²*(aq) + NO3 (ag) Ox agent: Red agent: 2. So3? (aq) + MnO4 (aq) → SO,2 (aq) + MnOz(aq) (not peroxide) Ox agent: Red agent: 3.arrow_forwardBased on the table below, which of the statements below is/are correct regarding the 3D printing process shown in the schematic? Z AXIS X AXIS YAXIS LEGEND A: Extruder B: Nozzle C: Printed part D: Hot plate E: Filament Table 15.2 Melting and Glass Transition Temperatures for Some of the More Common Polymeric Materials Material Polyethylene (low density) Polytetrafluoroethylene Polyethylene (high density) Polypropylene Nylon 6,6 Polyester (PET) Poly(vinyl chloride) Polystyrene Polycarbonate Glass Transition Temperature [°C (°F)] -110 (-165) -97 (-140) -90 (-130) -18 (0) 57 (135) 69 (155) 87 (190) 100 (212) 150 (300) Melting Temperature [°C (°F)] 115 (240) 327 (620) 137 (279) 175 (347) 265 (510) 265 (510) 212 (415) 240 (465) 265 (510) a. This process is best suited for the low volume production of tubes, bars and beams due to the nature of the extrusion process b. Manufacturing a thermoplastic HDPE hose with an extrusion nozzle heated to 175C is possible with this process □c. You can…arrow_forward
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