
The required

Answer to Problem 39E
The required
Explanation of Solution
Given data:
The angular frequency is
Calculation:
The given diagram is shown in Figure 1.
The conversion from
The conversion from
The conversion from
The conversion from
The conversion from
The capacitive reactance of
Substitute
The capacitive reactance of
Substitute
The modified diagram is shown in Figure 2.
Apply KCL at node
Apply KCL at node
The standard equation for admittance parameters is,
Write equation (1) and equation (2) in matrix form.
Write equation (3) and equation (4) in matrix form
Compare equation (5) with equation (6).
The voltage expression
Substitute
The voltage expression
Substitute
The standard equation for impedance parameter are,
Compare equation (7) with equation (9).
Compare equation (8) with equation (10).
The
Conclusion:
Therefore, the required
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Chapter 16 Solutions
Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
- 1° ⑤ Aa "Human-written solution required" 2. Using the characteristics of Fig. 6.11, determine ID for the following levels of VGs (with VDS > VP): a. VGs = 0V. b. VGs=-1 V. c. VGs -1.5 V. d. VGS -1.8 V. e. VGS = -4 V. f. VGs=-6V. 3. Using the results of problem 2 plot the transfer characteristics of ID vs. VGS- 4. a. Determine Vps for VGs = 0V and Ip = 6 mA using the characteristics of Fig. 6.11. b. Using the results of part (a), calculate the resistance of the JFET for the region Ip = 0 to 6 mA for VGs =0V. c. Determine Vps for VGS = -1 V and ID = 3 mA. d. Using the results of part (c), calculate the resistance of the JFET for the region ID = 0 to 3 mA for VGs -1 V. e. Determine Vps for VGs = -2 V and ID = 1.5 mA. f. Using the results of part (e), calculate the resistance of the JFET for the region ID = 0 to 1.5 mA for VGS-2 V. g. Defining the result of part (b) as ro, determine the resistance for VGs -1 V using Eq. (6.1) and compare with the results of part (d). h. Repeat part (g)…arrow_forward① Esterfication + R'on R Hydrolysis OH Alcohol A. 0-R Carboxylic Acid Ester NOD-10arrow_forward4. a. Determine VDs for VGS = 0 V and ID = 6 mA using the characteristics of Fig. 6.11. b. Using the results of part (a), calculate the resistance of the JFET for the region ID = 0 to 6 mA for VGS = 0 V. c. Determine VDs for VGS = -1 V and ID = 3 mA. d. Using the results of part (c), calculate the resistance of the JFET for the region ID = 0 to 3 mA for VGS = -1 V. e. Determine VDs for VGS = -2 V and ID = 1.5 mA. f. Using the results of part (e), calculate the resistance of the JFET for the region ID = 0 to 1.5 mA for VGS = -2 V. g. Defining the result of part (b) as ro, determine the resistance for VGS = -1 V using Eq. (6.1) and compare with the results of part (d). h. Repeat part (g) for VGS = -2 V using the same equation, and compare the results with part (f). i. Based on the results of parts (g) and (h), does Eq. (6.1) appear to be a valid approximation?arrow_forward
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- a A DI AD: AD, b C ADDS AD Fig.(2) LOIT 4-Draw the waveform for the c:t. shown in fig.(2) but after replaced Di and D3 by thyristors with a 30° and a2 #90°.arrow_forwarda b C ADDS D Fig.(2) L O 5- Draw the waveform for the cct. shown in fig.(2) but after replace the 6-diodes by 6- thyristor.arrow_forwardThe magnetic field component of an EM wave propagating through a nonmagnetic medium (po) is = Determine: H=25 sin (2 x 10't + 6x) a, mA/m (a) The direction of wave propagation. (b) The permittivity of the medium. (c) The electric field intensity.arrow_forward
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