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Figure P10.52 is a PMOS version of the current-source circuit shown inFigure 10.17. The transistor
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MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
- 1. Calculate the component values necessary to give the design of a Class B common emitter amplifier based on BC109 or equivalent. The nominal voltage gain should be 5 and the input signal should be 0.2 Vpeak-peak. Given such a general specification itarrow_forward4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞. a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line. b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal signals at the base of the transistor and the peak-to-peak value of Vs. If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor, determine the peak-to-peak value in the output voltage, assuming vs is equal to the value determined in part (b). Vcc=+10 V www Rs = 0.7 kΩ Cc www RB RE voarrow_forwardFor each transistor shown in Figure P10.1,determine whether the BE and BC junctions areforward- or reverse-biased, and determine theoperating region.arrow_forward
- 32 The circuit shown in Figure P10.32 is a common-collector (also called an emitter follower) amplifier stage implemented with an npn silicon transistor. Determine VCEQ at the DC operating or Q point. Vcc = 12 V B = 130 R = 82 k2 R2 = 22 k2 Rs = 0.7 k2 Rp = 0.5 k2 RL = 16 2 R13 Vcl Rs R2 RE ww wwarrow_forward9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.arrow_forward2) Consider the circuit given below. (Assume: K-4mA/V', Vt=-1V, A=0, (K= µCox.(W/L)) da Perform DC analysis and calculate Va. Vsg, Vs, voltages, and Ip, gm, ro values bo Draw a small-signal equivalent circuit Co Calculate Av, Rin, Rout values as shown on the schematic Also ) satwaton mode Test for Fill inthe table VG VSG O2m A Rin Vs QUin ID vo Coo 9m Ro Av Rout Rin Routarrow_forward
- i need the answer quicklyarrow_forward1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA rms. b) Calculate the input power dissipated by the circuit if Rg is changed to 1.5 kN. c) What maximum output power can be delivered by the circuit if RB is changed to 1.5 kN? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) Rc = 16 2 RB 1.2 k2 V. B - 40 100 µF Figure 1arrow_forwardVsis (~ Q3 (a) What is the advantage of using MOSFET as compared to BJT at the first stage of multi-stage amplifier? Rais 600 02 www Z₁ (b) Describe the function of the capacitor for the following condition: (1) (ii) SEEE/SKEE 1073 (c) The transistors parameters in Figure Q.3 are given as follow: BJT (iv) ↑ B-350, VBE 0.7 V, Ic=0.3 mA, VT 26 mV, and ro=00 E-MOSFETk 0.8 mA/V², VT- Vas(T) = 1 V C₁ HE a capacitor between stage 1 and stage 2 of a RC-coupled amplifier. bypass capacitor which is commonly used in small signal amplifier. (i) Draw the ac equivalent circuit at middle frequency for circuit in Figure Q.3 by using hybrid-x model. (ii) Determine the values of Z., Ziz and Zo. (iii) Calculate the gain, v/v, in decibel (dB). Draw and label the waveforms vo when v=2 sin 50t [mV] for one complete cycle. + Roi 50 ΚΩ Vi Ra 6 kn Ro 4.5 k Q₁ Rs 3 kQ C₂ не +15 V DS ↑ 22 R₁ 75 k R₂ 9 kn Figure Q.3 Multistage amplifier circuit Re RE 2kQ Rez 1kQ ← 2₂ -C₁ R₂ 20k2 %arrow_forward
- QUESTION 20: The output stage in the following Figure is a Darlington pair emitter-follower configuration. Assume ß= 115 for all npn transistors and ß = 65 for all pnp transistors. Let V47 = 140 V for Q7, V411 = 148 V for Q11, and VA = ∞ for all other transistors. Calculate the small-signal resistance looking into the emitters of Q9 and Qg, i.e. Reg and Res, respectively. Hence, determine the output resistance Ro. Re9 (kn) Format: 9.92 Re8 (2) Format: 74.4 R₂ (22) Format: 22.67 V+ 26 V- Bias - R, = 0.2 kΩ 27 211 www V+ Q9 = 0.2 mA Q8 www IC8= 1 mA Ro -OVO R₁ = 5 kQarrow_forward........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configurationarrow_forwardQuestion is attached as picture.arrow_forward
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