Answered: V(r) =+ where P and Q are constants.… | bartleby

Related questions

Question

QUESTION 3
The solid phase of an element follows van-der Waals bonding with inter-atomic potential:

V(r)=+, where P and Q are constants. The bond length can be expressed as:
A. (20) 6
-6
B. ()
(9)-6
c. (2)
2P
D.
-6
(2²) 6

Expert Solution

Step 1p

Step by step

Solved in 2 steps with 2 images

SEE SOLUTION Check out a sample Q&A here

Blurred answer

Similar questions

1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 10¹5 cm-³ and Na = 5 x 10¹6 cm ³. n₁ = 1.5 x 10¹0 cm ³. &, = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type Na
Question 5: Consider an interatomic potential function of the form A B 12 Er= 76 a) Find the equilibrium bond length, ro, as a function of A and B. b) Derive the bond energy as a function of A and B. c) You are given that ro= 0.1 nm and Erl=-5 eV. Calculate values for A and B (remember to keep track of your units). d) Take the second derivative of energy with respect to r and evaluate it at ro. This is effectively the spring constant of the bond. Look up spring constants of some typical metal and ceramic materials online. Where does your calculated value sit relative to these examples values?
8. The vibrational constant o for O2 molecule is 1580 cm. Calculate the maximum displacement (r - re) in Å as a percentage of r. (= 1-207 Ả), when v = 0, v = 15. Assume that the molecule is a harmonic oscillator and r, is the %3D eauilibrium internuclear distance. CS Scanned with CamScanner
a) Calculate the characteristic temperature associated with a vibrational energy level transition of angular frequency ω = 2×1013 rad s-1 . b). A process “freezes out” at temperatures below 42 K. Calculate the typical energy associated with this process.
The force constant of HCl is 0.0482 N/m. a) Calculate its vibrational frequency. b) How much does the frequency change if hydrogen is replaced by deuterium?
What is the Miller index of the plane ABC shown in the following figure? 50 Z 3 56 У A →x 5a
(e) Using the characteristic function, show that a(N) (N²). = k„T (f) Show that fluctuations in the number of adsorbed particles satisfy (N*), (N)? 1-f Nf
1.4 Plot the energy band-gap Eg versus the lattice constant for the two ternary compounds, In¡ „Ga,As and Al,InAs. Label the values for the binary compounds, InAs, GaAs, AIAS, and InP. The band-gap formulas at 300K are E,(In „Ga,As) = (0.36 + 0.505x + 0,555x² Eg(Al,In „As) = 0.36 + 2.35x + 0.24x?. Show on your plot the locations (and values) of the lattice match conditions for the InP substrate.
4. A silicon sample has, at 300 K, o = 10-6 S/cm, Ny = Nc %3D = 1 x 1019 cm-3, %3D 1000 cm2/s, and u, = 600 cm2/s. Find the energy gap of the material at 300 K and the conductivity at 500 %3D K. Assume that Ny, N, H, and u, are independent of V' temperature.
K and (ii) T=400 K. (b) Repeat part (a) for GaAs. ales in silicon between E, and 3.27 (a) Determine the total number (#/cm') of energy states in silicon between E, and E.-3 KT at (1) T = 300 K and (ii) T = 400 K. (b) Repeat part (a) for GaAs. (a) Plot the density of states in the conduction band of silic
6. a) Calculate the characteristic temperature associated with a vibrational energy level transition of angular frequency w = 2x10¹3 rad s¹¹. b. A process "freezes out" at temperatures below 42 K. Calculate the typical energy associated with this process.
3. Consider the following parameters in a silicon pn junction at T = 300 K. Nd 1 x 1016 cm-³ Dn = 25 cm²/s ™n = 2 μs Na = 2 x 1016 cm-³ Dp = 10 cm²/s Tp = 1 μs ni = 1.5 x 1010 cm-3 Er = 11.7 Eo = 8.85 x 10-12 F/m

SEE MORE QUESTIONS