This problem concerns the following three samples of silicon, each of which has a different doping level: sample a : 6.25x10 cm arsenic sample b: 10" cm' boron, 5x10 cm phosphorous sample c: intrinsic (no doping) Complete the table like that shown below for these three samples. Assume that at room temperature the electron mobility H, is 1600 cm/V.s, the hole mobility , is 600 cm/V.s, and the intrinsic carrier concentration n; is (1/352) x1010 cm.

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Chapter1: Units, Trigonometry. And Vectors
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This problem concerns the following three samples of silicon, each of which has a different doping
level:
sample a : 6.25x10 cm arsenic
sample b : 10 cm' boron, 5x10 cm phosphorous
sample c : intrinsic (no doping)
Complete the table like that shown below for these three samples. Assume that at room temperature
the electron mobility u, is 1600 cm/N.s, the hole mobility H, is 600 cm2/V.s, and the intrinsic carrier
concentration n; is (1/352) x101° cm.
Transcribed Image Text:This problem concerns the following three samples of silicon, each of which has a different doping level: sample a : 6.25x10 cm arsenic sample b : 10 cm' boron, 5x10 cm phosphorous sample c : intrinsic (no doping) Complete the table like that shown below for these three samples. Assume that at room temperature the electron mobility u, is 1600 cm/N.s, the hole mobility H, is 600 cm2/V.s, and the intrinsic carrier concentration n; is (1/352) x101° cm.
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