please solve this question The figure below shows the 1/C2 versus reverse bias voltage curves for two different metals on differentn-type silicon wafers. Assume the contact area of the two different MS junctions are the same. Assumeboth silicon wafers are uniformly doped and at room temperature. Based on the C-V curves, answer thefollowing questions.1/C2ABK-1V -0.4VVreverse(a) Which metal is contacting more heavily doped silicon? Why?(b) Which metal has a higher workfunction? Why?

Part a) slope of the line of 1/C² verses reverse voltage will give us the doping concentration of…

Answered: The figure below shows the 1/C2 versus…

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

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The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where R1 and R2 are the resistances at temperatures T1 and T2, respectively, and is known as the temperature coefficient of resistance. If a copper wire has a resistance of 55 at 20C, find the maximum permissible operating temperature of the wire if its resistance is to increase by at most 20. Take the temperature coefficient at 20C to be =0.00382.
A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type material
a) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1
This about PN Junctions of semiconductors.
QUESTION 1 Provide an example each for a trivalent and pentavalent element. Describe the doping process of Silicon (Si) to obtain p-type and n-type semiconductor material. a) b) c) Explain forward bias and reverse bias conditions of an ideal p-n junction diode. Sketch the I-V characteristic of Si and Ge diode. Discuss why Si based semiconductor is move favored in production of solid state devices.
Problem 1. Define doping. 2. What is the difference between a pentavalent atom and a trivalent atom? 3. What are other names for the pentavalent and trivalent atoms? 4. How is an n-type semiconductor formed? 5. How is a p-type semiconductor formed? 6. What is the majority carrier in an n-type semiconductor? 7. What is the majority carrier in a p-type semiconductor? 8. Describe forward bias of a diode.
Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
Please find the correct answer by solving the problem
None Problem 1. Define doping. 2. What is the difference between a pentavalent atom and a trivalent atom? 3. What are other names for the pentavalent and trivalent atoms? 4. How is an n-type semiconductor formed? 5. How is a p-type semiconductor formed? 6. What is the majority carrier in an n-type semiconductor? 7. What is the majority carrier in a p-type semiconductor? 8. Describe forward bias of a diode.
For a silicon pn junction with T = 300 K, determine the diode current. The Is (reverse saturation current) is 10 raise to -14 or (10^-14) A. Determine the forward-bias diode current at VD = 0.5V, 0.6 V and 0.7V.
Consider the following circuit diagram. Using practical diode model solve the following items. i. What is the type of rectification in this circuit? ii. Calculate the total peak secondary voltage (Note that “RMS" value is given in the circuit) iii. Sketch the plot of time vs voltage over Load (RL) iv. Find the average voltage over Load. v. Find the maximum current passing over diodes. vi. Find the peak inverse voltage (PIV) over the diodes. vii. Find the minimum fuse current rating for the primary coil. 5:1 D DA 120 V rms D3 D2 RL=10kQ RL out ell lelll

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