ssume you are to create n pn transistor using n- and p-typed doped silicon with the 8/cm³, and 5 1o16/cm, for emitter, base and collector regions, respectively. You als m²/Vs, H = 600 cm/Vs, n; = 1,5 1010 1/cm³, q 1,602 10-19 C, e, = 12, e, = 8,85 idths for CB junction.

ssume you are to create n pn transistor using n- and p-typed doped silicon with the 8/cm³, and 5 1o16/cm, for emitter, base and collector regions, respectively. You als m²/Vs, H = 600 cm/Vs, n; = 1,5 1010 1/cm³, q 1,602 10-19 C, e, = 12, e, = 8,85 idths for CB junction.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Assume you are to create n pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm,
7.8/cm, and 5 1015/cm for emitter, base and collector regions, respectively. You also know Ln = 10 um, L, = 4 um, un = 1600
cm?/Vs, H = 600 cm2/Vs, n; = 1,5 1010 1/cm³, q = 1,602 10-19 C, e, = 12, e, = 8,85 10-12 F/m, VT = 25 mV. Calculate depletion zone
widths for CB junction.
%3D
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%3D

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