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In a very hıgh quality komo-junction p L D made ofa direct band gap semiconductor, the internally generated power is 6.13 aW with the internally emitted photoons of wavelength 2-06 m. If the radiative recombination lifetime is 13 as and the nonnadiative is 2398.The device electron current will be: O a. 2.564e-6 A O b. 1.631e-5 A Oc. 9.808e-5 A d. 3.862e-4 A O e. 3.249e-5 A

In a very hıgh quality komo-junction p L D made ofa direct band gap semiconductor, the internally generated power is 6.13 aW with the internally emitted photoons of wavelength 2-06 m. If the radiative recombination lifetime is 13 as and the nonnadiative is 2398.The device electron current will be: O a. 2.564e-6 A O b. 1.631e-5 A Oc. 9.808e-5 A d. 3.862e-4 A O e. 3.249e-5 A

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-4 J.s Si Ge Ga As 9.11 x 10-31 Kg E, (eV) n, (cm-) Hn (em /V-s) Hy (em?/V - s) N (cm ) N. (em ) m/m. 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 10 1.8 x 10 1.602 x 10-19 C 8.85 x 10-12 F/m 1500 3900 8500 Eo 450 1900 400 1.05 x 104J-s 2.78 x 109 1.04 x 1019 4.45 x 107 K 8.6 x 10-5 eV/K 9.84 x 1018 6x 1018 7.72 x 1018 KT/q 26 mV (T= 300 K) 26 meV (T = 300 K) 0.082 0.98 0.067 KT m/m G (F/m) 0.28 0,49 0.45 3 x 10 m/s 11.7 16 13.1 Nair = 1 NGAAS = 3.66 Some useful relations EgAL, Ga-4n(r) = 1.424 +1.247.r Egin.Ga-1A(x) = 0.36+ 1.064r 1eV = 1.602 x 10-19 J 1 KG = 1x 10 Wb/cm?
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-4 J.s Si Ge Ga As 9.11 x 10-31 Kg E, (eV) n, (cm-) Hn (em /V-s) Hy (em?/V - s) N (cm ) N. (em ) m/m. 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 10 1.8 x 10 1.602 x 10-19 C 8.85 x 10-12 F/m 1500 3900 8500 Eo 450 1900 400 1.05 x 104J-s 2.78 x 109 1.04 x 1019 4.45 x 107 K 8.6 x 10-5 eV/K 9.84 x 1018 6x 1018 7.72 x 1018 KT/q 26 mV (T= 300 K) 26 meV (T = 300 K) 0.082 0.98 0.067 KT m/m G (F/m) 0.28 0,49 0.45 3 x 10 m/s 11.7 16 13.1 Nair = 1 NGAAS = 3.66 Some useful relations EgAL, Ga-4n(r) = 1.424 +1.247.r Egin.Ga-1A(x) = 0.36+ 1.064r 1eV = 1.602 x 10-19 J 1 KG = 1x 10 Wb/cm?
In a very high quality homo-junction pa LED made of a direct band gap semiconductor, the innternally generated power is 6.13 aW with the internally emitted photons of wavelength A-06m. If the radiative recombination lifetime is 13 s and the nonradiative is 335.The device electron current will be: O a. 2.564e-6 A O b. 1.631e-5 A O c. 9.808e-5 A O d. 3.862e-4 A O e. 3.249e-5 A
Transcribed Image Text:In a very high quality homo-junction pa LED made of a direct band gap semiconductor, the innternally generated power is 6.13 aW with the internally emitted photons of wavelength A-06m. If the radiative recombination lifetime is 13 s and the nonradiative is 335.The device electron current will be: O a. 2.564e-6 A O b. 1.631e-5 A O c. 9.808e-5 A O d. 3.862e-4 A O e. 3.249e-5 A
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