Assume you are to create n+pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3, 6.2/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know Ln = 10 μm, Lp = 4 μm, μn = 1600 cm2/Vs, μp = 600 cm2/Vs, ni = 1,5 1010 1/cm3, q = 1,602 10-19 C, er = 12, eo = 8,85 10-12 F/m, VT = 25 mV. What is the minimum VCE for operation in active mode assuming hFE = β is very large? Assume you are to create n'pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm,6.2/cm?, and 5 10"/cm?, for emitter, base and collector regions, respectively. You also know L, = 10 um, L, = 4 um, H, = 1600cm/Vs, H, = 600 cmNs, n; = 1,5 1010 1/cm', q = 1,602 10-19 C, e, = 12, e, = 8,85 10:12 F/m, Vr = 25 mv. What is the minimumVee for operation in active mode assuming he = B is very large?%3D

n=3 1018 /cm3, p=6.2/cm3, and n=5 1016/cm3

Answered: Assume you are to create n+pn…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Assume you are to create n⁺pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 10¹⁸/cm³, 6.2/cm³, and 5 10¹⁶/cm³, for emitter, base and collector regions, respectively. You also know L_n = 10 μm, L_p = 4 μm, μ_n = 1600 cm²/Vs, μ_p = 600 cm²/Vs, n_i = 1,5 10¹⁰ 1/cm³, q = 1,602 10^-19 C, e_r = 12, e_o = 8,85 10^-12 F/m, V_T = 25 mV. What is the minimum V_CE for operation in active mode assuming h_FE = β is very large?

Assume you are to create n'pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm,
6.2/cm?, and 5 10"/cm?, for emitter, base and collector regions, respectively. You also know L, = 10 um, L, = 4 um, H, = 1600
cm/Vs, H, = 600 cmNs, n; = 1,5 1010 1/cm', q = 1,602 10-19 C, e, = 12, e, = 8,85 10:12 F/m, Vr = 25 mv. What is the minimum
Vee for operation in active mode assuming he = B is very large?
%3D

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