Consider a non-ideal MOSFET that has been fabricated on a siliconwafer with initial uniform boron doping of 7.5 × 1015 cm-3. The gateoxide has a thickness tox = 35 nm, fixed charge Qf /q = 5.0 × 1010 cm-2and mobile charge Qm /q = 2.5 × 1010 cm-2 (assume other oxidecharges are negligibly small). The gate has been fabricated frompolysilicon to give a gate length of 150 nm. The work functiondifference between the polysilicon gate and the silicon is –0.35 V.Assuming a temperature of 300 K and ignoring short channel effects,calculate the threshold voltage of the MOSFET if there is zero biasapplied between the source and the silicon substrate.
Consider a non-ideal MOSFET that has been fabricated on a siliconwafer with initial uniform boron doping of 7.5 × 1015 cm-3. The gateoxide has a thickness tox = 35 nm, fixed charge Qf /q = 5.0 × 1010 cm-2and mobile charge Qm /q = 2.5 × 1010 cm-2 (assume other oxidecharges are negligibly small). The gate has been fabricated frompolysilicon to give a gate length of 150 nm. The work functiondifference between the polysilicon gate and the silicon is –0.35 V.Assuming a temperature of 300 K and ignoring short channel effects,calculate the threshold voltage of the MOSFET if there is zero biasapplied between the source and the silicon substrate.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Question
Consider a non-ideal MOSFET that has been fabricated on a silicon
wafer with initial uniform boron doping of 7.5 × 1015 cm-3. The gate
oxide has a thickness tox = 35 nm, fixed charge Qf /q = 5.0 × 1010 cm-2
and mobile charge Qm /q = 2.5 × 1010 cm-2 (assume other oxide
charges are negligibly small). The gate has been fabricated from
polysilicon to give a gate length of 150 nm. The work function
difference between the polysilicon gate and the silicon is –0.35 V.
Assuming a temperature of 300 K and ignoring short channel effects,
calculate the threshold voltage of the MOSFET if there is zero bias
applied between the source and the silicon substrate.
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