(1) What is the type of channel in these MOS-C devices? (a) P-channel (b) N-channel (2) Are the C-V plots that merge at a C/C, value of 1 at a Vg of -5 V correspond to which frequency? (a) High frequency (b) Low frequency (3) Which device has the highest oxide thickness 'X'? (a) A (b) в (c) C
(1) What is the type of channel in these MOS-C devices? (a) P-channel (b) N-channel (2) Are the C-V plots that merge at a C/C, value of 1 at a Vg of -5 V correspond to which frequency? (a) High frequency (b) Low frequency (3) Which device has the highest oxide thickness 'X'? (a) A (b) в (c) C
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Transcribed Image Text:Question 21
The figure below shows C-V plots of three MOS-C devices A, B and C with the same doping
density but different oxide thicknesses: XA, XB and Xç. Answer the following questions
B
C
40
20
10
00
20
30
(1) What is the type of channel in these MOS-C devices?
(a) P-channel
(b) N-channel
(2) Are the C-V plots that merge at a C/Co value of 1 at a Vg of -5 V correspond to which
frequency?
(a) High frequency
(b) Low frequency
(3) Which device has the highest oxide thickness 'X?
(a) A
(b) B
(c) C
(4) When the MOSFET is biased into inversion and is AC modulated, the carriers in the
channel are modulated by
(a) R-G
(b) Carriers from the source and drain regions
(c) Leakage current from the gate
(d) Depletion of the majority in the inversion region
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