Plot the electron distribution function N(E) versus energy in a metal at (a) T = 0 K and (b) T = 300 K.
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Plot the electron distribution function N(E) versus energy in a metal at (a) T = 0 K and (b) T = 300 K.
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- 1)A Si crystal in the form of a cube of side 1.0 nm is at equilibrium at 300 K.The edge of the conduction band is Ec = -1.0 eVa) What is the energy of a conduction electron in the ground state (in eV) ?b) What is the energy of the conduction electron in the first excited state (in eV)?An SiO2 layer is formed on top of pure silicon. The Auger peak of silicon is at 91 eV. After oxidation, it is shifted to 78 eV. Therefore, pure and oxidized silicon are easily distinguishable. When the surface is oxidized, the silicon 91 eV peak intensity decreases because of attenuation by the silicon dioxide layer. After an SiO2 layer of thickness t is formed, the 91 eV Auger peak drops to 15% of its clean surface value. The angle of electron collection is 45o from the surface normal. If the mean free path is 0.5 nm for 91 eV electrons in silicon dioxide, what is the thickness t of the oxide coatingGraph below shows the electron occupancy probability P(E) as a function of energy for Bismuth (mBi = 3.47 × 10-25 kg) at the temperature T = 0 K. What is the number of conduction electrons per unit volume for Bismuth? 1 1 2 3 4 5 6 7 8 E (ev) P(E)
- You are depositing indium on a glass substrate. (a) Suppose that the surface energy of the substrate is 2.5 times higher than that of indium and that the interface energy is twice as high as indium. Calculate the contact angle you would expect for the deposited indium (b) If you were able to lower the surface energy of the substrate by a factor of 2 without affecting the interface energy through the application of a surfactant how would you expect the contact angle to change?5.47 Germanium is doped with 5 × 10¹5 donor atoms per cm³ at T = 300 K. The dimen- sions of the Hall device are d = 5 x 10-³ cm, W = 2 × 10-² cm, and L = 10-¹ cm. The current is I = 250 μA, the applied voltage is V. = 100 mV, and the magnetic flux density is B₂ = 500 gauss = 5 x 10-2 tesla. Calculate: (a) the Hall voltage, (b) the Hall field, and (c) the carrier mobility.