For drive-in diffusion of boron in silicon at Tad = 1373 K (drive-in diffusion temperature), determine the drive-in diffusion time ta if the junction depth is 3 μm. Let Qo 3.0 × 1018 atoms/m², CB = 0.85 x 1020 atoms/m³. For diffusion, let Qa 3.75 eV/atom and Do = 2.4 × 10-3 m²/s. =

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For drive-in diffusion of boron in silicon at Tad = 1373 K (drive-in diffusion temperature),
determine the drive-in diffusion time ta if the junction depth is 3 μm. Let Qo
3.0 × 1018 atoms/m², CB = 0.85 x 1020 atoms/m³. For diffusion, let Qa 3.75 eV/atom and
Do = 2.4 × 10-3 m²/s.
=
Transcribed Image Text:For drive-in diffusion of boron in silicon at Tad = 1373 K (drive-in diffusion temperature), determine the drive-in diffusion time ta if the junction depth is 3 μm. Let Qo 3.0 × 1018 atoms/m², CB = 0.85 x 1020 atoms/m³. For diffusion, let Qa 3.75 eV/atom and Do = 2.4 × 10-3 m²/s. =
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