Consider a silicon Schottky diode at room temperature. The silicon is doped with ND 5 x 1016 cm donors and the Schottky barrier height is Bn = 0.6 eV. (a) Sketch the charge density (p(x)) and electric field (ε(x)) profile in the diode at equilibrium. Calculate and label the values of the depletion region width (in μm), depleted charge density (in C/cm³), and peak electric field (in V/cm). (b) Show how p(x) and ε(x) change when reverse bias voltage is applied. Please draw the changes in p(x) and E(x) on the same sketches from part (i).
Consider a silicon Schottky diode at room temperature. The silicon is doped with ND 5 x 1016 cm donors and the Schottky barrier height is Bn = 0.6 eV. (a) Sketch the charge density (p(x)) and electric field (ε(x)) profile in the diode at equilibrium. Calculate and label the values of the depletion region width (in μm), depleted charge density (in C/cm³), and peak electric field (in V/cm). (b) Show how p(x) and ε(x) change when reverse bias voltage is applied. Please draw the changes in p(x) and E(x) on the same sketches from part (i).
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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Transcribed Image Text:Consider a silicon Schottky diode at room temperature. The silicon is doped with ND 5 x 1016 cm
donors and the Schottky barrier height is Bn = 0.6 eV.
(a) Sketch the charge density (p(x)) and electric field (ε(x)) profile in the diode at equilibrium.
Calculate and label the values of the depletion region width (in μm), depleted charge density
(in C/cm³), and peak electric field (in V/cm).
(b) Show how p(x) and ε(x) change when reverse bias voltage is applied. Please draw the changes
in p(x) and E(x) on the same sketches from part (i).
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