Please, help explain the following concept: We know that semiconductor bandgap changes with temperature. We also know qualitatively how the doping energy level (E_D for donors and E_A for acceptors) changes with increasingdoping density. Give a qualitative description of what happens to donor energy level (E_D) as N_D increases. Whathappens to the Fermi level, E_F at very high doping density? Make comment on the Boltzmannapproximation as the doping density increases to very high concentrations. Please illustrate the aboveusing schematics (Band Diagram).

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Please, help explain the following concept: We know that semiconductor bandgap changes with temperature. We also know qualitatively how the doping energy level (E_D for donors and E_A for acceptors) changes with increasing
doping density. Give a qualitative description of what happens to donor energy level (E_D) as N_D increases. What
happens to the Fermi level, E_F at very high doping density? Make comment on the Boltzmann
approximation as the doping density increases to very high concentrations. Please illustrate the above
using schematics (Band Diagram).

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