Consider a bar of uniformly doped silicon at room temperature with a platinum silicide contact on the left end. For a Si-PtSi contact, B = 0.87 V and Bp = 0.23 V. For each of the following scenarios, sketch the energy band diagram of the contact when V₁ = 0V (no voltage is applied). Calculate and label on your diagram the following quantities: (1) the Schottky barrier height, (2) Ec - Ep in the semiconducting material far away from the contact, and (3) qVbi. (a) A contact between PtSi and n-type doped silicon (ND = 10¹7cm-³). (b) A contact between PtSi and p-type doped silicon (NA = 1017cm-³). (c) A contact between PtSi and p-type doped silicon (N = 5 x 104 cm³).

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Chapter59: Motor Startup And Troubleshooting Basics
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Consider a bar of uniformly doped silicon at room temperature with a platinum silicide contact on the left
end. For a Si-PtSi contact, B = 0.87 V and Bp = 0.23 V. For each of the following scenarios, sketch
the energy band diagram of the contact when V₁ = 0V (no voltage is applied). Calculate and label on
your diagram the following quantities: (1) the Schottky barrier height, (2) Ec - Ep in the semiconducting
material far away from the contact, and (3) qVbi.
(a) A contact between PtSi and n-type doped silicon (ND = 10¹7cm-³).
(b) A contact between PtSi and p-type doped silicon (NA = 1017cm-³).
(c) A contact between PtSi and p-type doped silicon (N = 5 x 104 cm³).
Transcribed Image Text:Consider a bar of uniformly doped silicon at room temperature with a platinum silicide contact on the left end. For a Si-PtSi contact, B = 0.87 V and Bp = 0.23 V. For each of the following scenarios, sketch the energy band diagram of the contact when V₁ = 0V (no voltage is applied). Calculate and label on your diagram the following quantities: (1) the Schottky barrier height, (2) Ec - Ep in the semiconducting material far away from the contact, and (3) qVbi. (a) A contact between PtSi and n-type doped silicon (ND = 10¹7cm-³). (b) A contact between PtSi and p-type doped silicon (NA = 1017cm-³). (c) A contact between PtSi and p-type doped silicon (N = 5 x 104 cm³).
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