An n-type semiconductor sample is continuously and uniformly excited (optically) at low level. Start from the balance between the generation and recombination and find the expression for the steady state excess hole concentration in the sample in terms of gop and τp. Do not derive this expression using the continuity or diffusion equations. Show complete work.
An n-type semiconductor sample is continuously and uniformly excited (optically) at low level. Start from the balance between the generation and recombination and find the expression for the steady state excess hole concentration in the sample in terms of gop and τp. Do not derive this expression using the continuity or diffusion equations. Show complete work.
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An n-type semiconductor sample is continuously and uniformly excited (optically) at low level. Start from the balance between the generation and recombination and find the expression for the steady state excess hole concentration in the sample in terms of gop and τp. Do not derive this expression using the continuity or diffusion
equations. Show complete work.
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