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![(e) Sketch the energy band diagram for forward bias Va=0.5 V. Label energy barrier and
quasi-Fermi levels, no calculation of quasi-Fermi level positions.
(f) Do the same as part (e) for reverse bias V₁=-5V.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fc46c5db2-17ce-4606-869f-5140fbff1eea%2F380f5aca-1c3e-4b3a-ac86-620eaad7eff3%2Fzboauxh_processed.png&w=3840&q=75)
Transcribed Image Text:(e) Sketch the energy band diagram for forward bias Va=0.5 V. Label energy barrier and
quasi-Fermi levels, no calculation of quasi-Fermi level positions.
(f) Do the same as part (e) for reverse bias V₁=-5V.
![A Si step junction maintained at room temperature under equilibrium conditions has a p-side
doping of Na = 5x10¹5/cm³, and an n-side doping of Nd = 2x10¹6/cm³. Compute](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fc46c5db2-17ce-4606-869f-5140fbff1eea%2F380f5aca-1c3e-4b3a-ac86-620eaad7eff3%2Fu0hsyt7_processed.png&w=3840&q=75)
Transcribed Image Text:A Si step junction maintained at room temperature under equilibrium conditions has a p-side
doping of Na = 5x10¹5/cm³, and an n-side doping of Nd = 2x10¹6/cm³. Compute
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