Carrier Statistics Example 3.4 In a silicon sample at equilibrium the Fermi level is located above the middle of the band gap by 0.38eV. The phosphorus donor states are located 0.04 eV below the conduction band. Determine the percentage ionization of the phosphorus atoms at T = 300 K. Answer: 100%
Carrier Statistics Example 3.4 In a silicon sample at equilibrium the Fermi level is located above the middle of the band gap by 0.38eV. The phosphorus donor states are located 0.04 eV below the conduction band. Determine the percentage ionization of the phosphorus atoms at T = 300 K. Answer: 100%
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Carrier Statistics
Example 3.4
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In a silicon sample at equilibrium the Fermi level is located
above the middle of the band gap by 0.38eV. The phosphorus
donor states are located 0.04 eV below the conduction band.
Determine the percentage ionization of the phosphorus atoms
at T = 300 K.
Answer: ~ 100%
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