Determine the carrier density gradient to produce a given diffusion current density. The hole concentration in silicon at T= 300 K varies linearly from x =0 to x 0.01 cm. The hole diffusion coefficient is D, = 10 cm2/s, the hole diffusion current density is Jaif= 20 A/cm2, and the hole concentration at x = 0 is p = 4 x 1017 cm-3. Determine the hole concentration at x = 0.01 cm.

Determine the carrier density gradient to produce a given diffusion current density. The hole concentration in silicon at T= 300 K varies linearly from x =0 to x 0.01 cm. The hole diffusion coefficient is D, = 10 cm2/s, the hole diffusion current density is Jaif= 20 A/cm2, and the hole concentration at x = 0 is p = 4 x 1017 cm-3. Determine the hole concentration at x = 0.01 cm.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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