A homogeneous p-type semiconductor material is doped with N¸ = 10“ cm³ at T=300K.Assume that hole concentration at equilibrium p. = N. . The intrinsic carrier-3concentration at 300K is n, = 10" cmThe carrier mobility values areH, = 1000 cm?/(V ·s) and u,=500cm²/(V.s). The minority carrier lifetime isT,0 = 2×10°s . A generation source is turned on at =0. with a generate rate of1020 cm³s'. The electric field is zero.(1) Derive &n(t), the expression for the excess-carrier concentration as a function oftime for t>0;(2) Determine the steady-state excess carrier concentration Sn(0);(3) Determine the steady-state conductivity of the semiconductor o (∞);%3D

Given:Na=p0=1016 cm-3ni=1010 cm-3μn=1000 cm2/(V.s)μp=500 c m2/(V.s) τn0=2×10-6 s

A homogeneous p-type semiconductor material is doped with N, = 10“ cm³ at T=300K. Assume that hole concentration at equilibrium p, = N, . The intrinsic carrier concentration at 300K is n, =10" cm The carrier mobility values are H, = 1000 cm²/(V.s) and µ,= 500cm²/(V.s). The minority carrier lifetime is Tno = 2×10°s . A generation source is turned on at t=0. with a generate rate of 100 cm's-'. The electric field is zero. (1) Derive Sn(t), the expression for the excess-carrier concentration as a function of time for t>0; (2) Determine the steady-state excess carrier concentration Sn(∞); Determine the steady-state conductivity of the semiconductor o(∞); (3)

A homogeneous p-type semiconductor material is doped with N, = 10“ cm³ at T=300K. Assume that hole concentration at equilibrium p, = N, . The intrinsic carrier concentration at 300K is n, =10" cm The carrier mobility values are H, = 1000 cm²/(V.s) and µ,= 500cm²/(V.s). The minority carrier lifetime is Tno = 2×10°s . A generation source is turned on at t=0. with a generate rate of 100 cm's-'. The electric field is zero. (1) Derive Sn(t), the expression for the excess-carrier concentration as a function of time for t>0; (2) Determine the steady-state excess carrier concentration Sn(∞); Determine the steady-state conductivity of the semiconductor o(∞); (3)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

A homogeneous p-type semiconductor material is doped with N¸ = 10“ cm³ at T=300K.
Assume that hole concentration at equilibrium p. = N. . The intrinsic carrier
-3
concentration at 300K is n, = 10" cm
The carrier mobility values are
H, = 1000 cm?/(V ·s) and u,=500cm²/(V.s). The minority carrier lifetime is
T,0 = 2×10°s . A generation source is turned on at =0. with a generate rate of
1020 cm³s'. The electric field is zero.
(1) Derive &n(t), the expression for the excess-carrier concentration as a function of
time for t>0;
(2) Determine the steady-state excess carrier concentration Sn(0);
(3) Determine the steady-state conductivity of the semiconductor o (∞);
%3D

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