A homogeneous p-type semiconductor material is doped with N, = 10“ cm³ at T=300K. Assume that hole concentration at equilibrium p, = N, . The intrinsic carrier concentration at 300K is n, =10" cm The carrier mobility values are H, = 1000 cm²/(V.s) and µ,= 500cm²/(V.s). The minority carrier lifetime is Tno = 2×10°s . A generation source is turned on at t=0. with a generate rate of 100 cm's-'. The electric field is zero. (1) Derive Sn(t), the expression for the excess-carrier concentration as a function of time for t>0; (2) Determine the steady-state excess carrier concentration Sn(∞); Determine the steady-state conductivity of the semiconductor o(∞); (3)
A homogeneous p-type semiconductor material is doped with N, = 10“ cm³ at T=300K. Assume that hole concentration at equilibrium p, = N, . The intrinsic carrier concentration at 300K is n, =10" cm The carrier mobility values are H, = 1000 cm²/(V.s) and µ,= 500cm²/(V.s). The minority carrier lifetime is Tno = 2×10°s . A generation source is turned on at t=0. with a generate rate of 100 cm's-'. The electric field is zero. (1) Derive Sn(t), the expression for the excess-carrier concentration as a function of time for t>0; (2) Determine the steady-state excess carrier concentration Sn(∞); Determine the steady-state conductivity of the semiconductor o(∞); (3)
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![A homogeneous p-type semiconductor material is doped with N¸ = 10“ cm³ at T=300K.
Assume that hole concentration at equilibrium p. = N. . The intrinsic carrier
-3
concentration at 300K is n, = 10" cm
The carrier mobility values are
H, = 1000 cm?/(V ·s) and u,=500cm²/(V.s). The minority carrier lifetime is
T,0 = 2×10°s . A generation source is turned on at =0. with a generate rate of
1020 cm³s'. The electric field is zero.
(1) Derive &n(t), the expression for the excess-carrier concentration as a function of
time for t>0;
(2) Determine the steady-state excess carrier concentration Sn(0);
(3) Determine the steady-state conductivity of the semiconductor o (∞);
%3D](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fb97d881f-8f42-4425-a126-fc0246d518f3%2Fb8586d91-c8c8-4e13-aaa8-d7dfaac775e9%2Fk2oj45s_processed.png&w=3840&q=75)
Transcribed Image Text:A homogeneous p-type semiconductor material is doped with N¸ = 10“ cm³ at T=300K.
Assume that hole concentration at equilibrium p. = N. . The intrinsic carrier
-3
concentration at 300K is n, = 10" cm
The carrier mobility values are
H, = 1000 cm?/(V ·s) and u,=500cm²/(V.s). The minority carrier lifetime is
T,0 = 2×10°s . A generation source is turned on at =0. with a generate rate of
1020 cm³s'. The electric field is zero.
(1) Derive &n(t), the expression for the excess-carrier concentration as a function of
time for t>0;
(2) Determine the steady-state excess carrier concentration Sn(0);
(3) Determine the steady-state conductivity of the semiconductor o (∞);
%3D
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