3) A GaAs semiconductor is doped n-type No-3x1016 cm ³. Within the band gap of the material are 8x10¹5 cm-³ donor defects located energetically below the Fermi level such that only 75% of those defects are populated with carriers. 3a. Are the minority carriers electrons or holes for this material? 3b. What is the total free carrier concentration of this GaAs material? 3c. Where is the Fermi Level for this material relative to the conduction band?

3) A GaAs semiconductor is doped n-type No-3x1016 cm ³. Within the band gap of the material are 8x10¹5 cm-³ donor defects located energetically below the Fermi level such that only 75% of those defects are populated with carriers. 3a. Are the minority carriers electrons or holes for this material? 3b. What is the total free carrier concentration of this GaAs material? 3c. Where is the Fermi Level for this material relative to the conduction band?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

3)
A GaAs semiconductor is doped n-type ND-3x10¹6 cm ³. Within the band gap of
the material are 8x10¹5 cm ³ donor defects located energetically below the Fermi level such
that only 75% of those defects are populated with carriers.
3a. Are the minority carriers electrons or holes for this material?
3b. What is the total free carrier concentration of this GaAs material?
3c. Where is the Fermi Level for this material relative to the conduction band?
3d. Where is the donor defect trap located relative to the conduction band?
3e. What wavelength of light would be needed to excite trapped charge from the above
mentioned defect site to the conduction band?

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