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A diffused silicon p-n junction has a linearly graded junction on the p-side with a=109 cm, and a uniform doping of 3x1014 cm on the n-side. If the depletion layer width of the p-side is 0.8 um at zero bias, find the total depletion layer width, the built-in potential and the maximum field at zero bias. (Hint: Use the solution

A diffused silicon p-n junction has a linearly graded junction on the p-side with a=109 cm, and a uniform doping of 3x1014 cm on the n-side. If the depletion layer width of the p-side is 0.8 um at zero bias, find the total depletion layer width, the built-in potential and the maximum field at zero bias. (Hint: Use the solution

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A diffused silicon p-n junction has a linearly graded junction on the p-side with a=101º cm“, and a uniform doping of 3x104 cm* on the n-side. If the depletion layer width of the p-side is 0.8 µm at zero bias, find the total depletion layer width, the built-in potential and the maximum field at zero bias. (Hint: Use the solution for a linearly-graded junction on one side, and the solution for an abrupt junction on the other side, matching the electric field at the junction.)
Transcribed Image Text:A diffused silicon p-n junction has a linearly graded junction on the p-side with a=101º cm“, and a uniform doping of 3x104 cm* on the n-side. If the depletion layer width of the p-side is 0.8 µm at zero bias, find the total depletion layer width, the built-in potential and the maximum field at zero bias. (Hint: Use the solution for a linearly-graded junction on one side, and the solution for an abrupt junction on the other side, matching the electric field at the junction.)
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