7.32 For a 0.18-um CMOS fabrication process: Vm = 0.5 V, Vp = -0.5 V, u„Cox = 400 µA/V?, upCox 100 µA/V?, VA (n-channel devices) = 5L (um), and |VA| (p-channel devices) = 6L (um). Find the small-signal model parameters gm and r, for both an NMOS and a PMOS transistor having WIL = 5 um/0.5 µm and operating at Ip= 100 µA. Also, find the overdrive voltage at which each device must be operating.

7.32 For a 0.18-um CMOS fabrication process: Vm = 0.5 V, Vp = -0.5 V, u„Cox = 400 µA/V?, upCox 100 µA/V?, VA (n-channel devices) = 5L (um), and |VA| (p-channel devices) = 6L (um). Find the small-signal model parameters gm and r, for both an NMOS and a PMOS transistor having WIL = 5 um/0.5 µm and operating at Ip= 100 µA. Also, find the overdrive voltage at which each device must be operating.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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