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One output curve (IDs-VDs) of an n-channel MOSFET is characterized by the following parameters: ID(sat) = 200 µA, VDS(sat) = 4 V, and Vth = 0.8 V (a) What is the gate-to-source voltage VGs? (b) If W/L = 2, calculate the value of the process transconductance parameter kn’ (kn’ = µnCox). (c) Calculate ID when VGs = 2 V and VDs = 2 V. (d) Calculate ID when VGS = 3 V and VDs = 1 V.

One output curve (IDs-VDs) of an n-channel MOSFET is characterized by the following parameters: ID(sat) = 200 µA, VDS(sat) = 4 V, and Vth = 0.8 V (a) What is the gate-to-source voltage VGs? (b) If W/L = 2, calculate the value of the process transconductance parameter kn’ (kn’ = µnCox). (c) Calculate ID when VGs = 2 V and VDs = 2 V. (d) Calculate ID when VGS = 3 V and VDs = 1 V.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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One output curve (IDs-VDs) of an n-channel MOSFET is characterized by the following parameters: ID(sat) = 200 µA, VDS(sat) = 4 V, and Vth = 0.8 V (a) What is the gate-to-source voltage VGs? (b) If W/L = 2, calculate the value of the process transconductance parameter kn’ (kn’ = µnCox). (c) Calculate ID when VGs = 2 V and VDs = 2 V. (d) Calculate ID when VGS = 3 V and VDs = 1 V.
Transcribed Image Text:One output curve (IDs-VDs) of an n-channel MOSFET is characterized by the following parameters: ID(sat) = 200 µA, VDS(sat) = 4 V, and Vth = 0.8 V (a) What is the gate-to-source voltage VGs? (b) If W/L = 2, calculate the value of the process transconductance parameter kn’ (kn’ = µnCox). (c) Calculate ID when VGs = 2 V and VDs = 2 V. (d) Calculate ID when VGS = 3 V and VDs = 1 V.
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