One output curve (IDs-VDs) of an n-channel MOSFET is characterized by the following parameters:ID(sat) = 200 µA, VDS(sat) = 4 V, and Vth = 0.8 V(a) What is the gate-to-source voltage VGs?(b) If W/L = 2, calculate the value of the process transconductance parameter kn’ (kn’ = µnCox).(c) Calculate ID when VGs = 2 V and VDs = 2 V.(d) Calculate ID when VGS = 3 V and VDs = 1 V.

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Answered: One output curve (IDs-VDs) of an…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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From the given circuit below, calculate the quiescent dc drain current (lbo) and gate to source voltage (Vesa). Q1 is BSV81 N-channel E-MOSFET with loss = 6 UA and VTH = -1.1 V. 20V 100K Q1 5K 120K
What is the W/L ratio required for an PMOStransistor to have an on-resistance of 2 k whenVGS = −5 V and VBS = 0? Assume VTP = −0.70 V.(b) Repeat for an NMOS transistor with VGS =+5 V and VBS = 0. Assume VTN = 0.70 V.
Discussion: (1) From your practical results, plot the drain characteristic curve for D-MOSFET and transfer characteristic curves for the two types of MOSFET transistors. (2) What is the difference between JFET and MOSFET transistors?. (3) What is the major difference in construction of the D-MOSFET and E- MOSFET?. (4) What does VT represent?. (5) How can E-MOSFET operate with absence of a physical channel? Explain the operation of it. (6) Choose the correct answer: a) Which one of the following transistors cannot operate with VGs=0. 1. JFET. 2. D-MOSFET. 3. E-MOSFET. b) If the VGs in an n-channel D-MOSFET is made more negative, the drain current will. 1. Increase. 2. Decrease. 3. Be zero. c) A MOSFET differs from JFET mainly because: 1. MOSFETs do not have a physical channel. 2. The JFET has a pn junction. 3. of the power rating. d) The n-channel D-MOSFET with a positive Vas is operating in: 1. The depletion mode. 2. The enhancement mode. 3. Saturation.
). An NPN transistor with a 0.96, VCE(sat)-0.3 V and ICBO 3 pA. A common emitter configuration is used and Vcc = 12 V and RL ransistor enter into saturation region. 5 k2. Estimate the minimum base current required in order that
find :- (Ic) & (VBE) & (β)
VDD = 16V, VGG = -3V, RG = 1.2 M-ohm, RD = 2200ohm, IDSS = 10mA, VP=-4.5V a. Determine the drain current ID in mA. b. Determine the gate voltage, VG c. Determine the source terminal voltage, VS d. Determine the gate-to-source voltage, VGS e. Calculate the drain terminal voltage, VD f. Determine the drain-to-source voltage, VDS
4. Sketch typical output characteristics for an enhancement mode long- channel n-type MOSFET. Show the gate voltage (V2) increasing in linear steps (e.g. Vg = 1 V, 2 V, 3 V, 4 V). Indicate on the characteristics where the onset of the saturated drain current (lasat) occurs for each curve. Give this drain voltage (Va) in terms of threshold voltage (V:) and Vg. 5. Show the effect of channel length modulation on the curves in part (4). Explain why channel length modulation occurs and why it is more prominent in short gate-length devices than in long gate-length devices.
A p-channel enhancement MOSFET has Vto=−0.5 V and K=0.2 mA/V2. Assuming operation in the saturation region, what value of vGS is required for iD = 0.8 mA ?
1. The circuit shown in the figure is a/an a. XOR gate b. AND gate c. XNOR gate d. OR gate 2. From the circuit shown, if the inputs A and B are both 1, Q3 is/has a. in the active region b. saturated c. at cut-off d. a collector-emitter voltage equal to 0 V3. From the circuit shown, if the inputs A and B are 1 and 0 respectively, Q3 is/has a. at cut-off b. saturated c. in the active region d. a positive collector-base voltage4. From the circuit shown, if the inputs A and B are 0 and 1 respectively, Q5 is/has/will| a. a negative base-collector voltage b. a collector-emitter voltage approximately 0 V c. at cut-off d. cause the LED to turn off
Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that = 4, unCox 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V¹. In the saturation region, the drain conductance (in micro seimens) is - W L
i need detail explanations on how to solve this question
AaBbCcDc AaBbCcDc AaBbC AaBbCc A aB AG I Normal T No Spaci... Heading 1 Heading 2. Title Paragraph Styles .. |.. ..|. .6 .. For the transistor shown in below figure, Calculate the value of Rg that will just make the transistor work as closed switch. Hence Bpc = 80, VBE = 0.7V, VCE(sat) =0.2V, Vcc = 12V, Rc %3D = 2.7KN. Calculate the IB, Ic and Calculate Rg. Vcc Re Rc

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