The figure below shows NMOS and PMOS devices with drain, source, and gate ports annotated. Determine the mode of operation (saturation - velocity saturation or channel pinch-off, linear, or cutoff) and drain current ID for each of the biasing configurations given below, using the following transistor data. Assume (W/L) = 1 and VSB = 0. NMOS: k'n = 115µA/V2, VT0 = 0.43V, λ = 0.06V−1, VDSAT = 0.6V PMOS: k'p = −30µA/V2, VT0 = −0.4V, λ = −0.1V−1, VDSAT = −1.0V (a) NMOS: VGS = 2.5V , VDS = 2.5V . PMOS: VGS = −0.5V , VDS = −1.25V .
The figure below shows NMOS and PMOS devices with drain, source, and gate ports annotated. Determine the mode of operation (saturation - velocity saturation or channel pinch-off, linear, or cutoff) and drain current ID for each of the biasing configurations given below, using the following transistor data. Assume (W/L) = 1 and VSB = 0. NMOS: k'n = 115µA/V2, VT0 = 0.43V, λ = 0.06V−1, VDSAT = 0.6V PMOS: k'p = −30µA/V2, VT0 = −0.4V, λ = −0.1V−1, VDSAT = −1.0V (a) NMOS: VGS = 2.5V , VDS = 2.5V . PMOS: VGS = −0.5V , VDS = −1.25V .
Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
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The figure below shows NMOS and PMOS devices with drain, source, and gate ports annotated. Determine the mode of operation (saturation - velocity saturation or channel pinch-off, linear, or cutoff) and drain current ID for each of the biasing configurations given below, using the following transistor data. Assume (W/L) = 1 and VSB = 0.
NMOS: k'n = 115µA/V2, VT0 = 0.43V, λ = 0.06V−1, VDSAT = 0.6V
PMOS: k'p = −30µA/V2, VT0 = −0.4V, λ = −0.1V−1, VDSAT = −1.0V
(a) NMOS: VGS = 2.5V , VDS = 2.5V . PMOS: VGS = −0.5V , VDS = −1.25V .

Transcribed Image Text:### Transcription for Educational Purposes
The figure illustrates NMOS and PMOS devices with annotations indicating the drain, source, and gate ports. The objective is to determine the mode of operation (such as saturation - velocity saturation or channel pinch-off, linear, or cutoff) and the drain current, \( I_D \), for each biasing configuration. This analysis utilizes the following transistor parameters. It is assumed that \( (W/L) = 1 \) and \( V_{SB} = 0 \).
#### NMOS Transistor Parameters:
- \( k_n' = 115 \, \mu A/V^2 \)
- \( V_{T0} = 0.43 \, V \)
- \( \lambda = 0.06 \, V^{-1} \)
- \( V_{DSAT} = 0.6 \, V \)
#### PMOS Transistor Parameters:
- \( k_p' = -30 \, \mu A/V^2 \)
- \( V_{T0} = -0.4 \, V \)
- \( \lambda = -0.1 \, V^{-1} \)
- \( V_{DSAT} = -1.0 \, V \)
#### Diagram Description:
The diagram shows symbols of NMOS and PMOS transistors:
- **NMOS (left):** The typical NMOS symbol with the gate (G), drain (D), and source (S) labeled.
- **PMOS (right):** The PMOS symbol, similarly labeled with gate (G), drain (D), and source (S).
These symbols help identify the terminal connections for analyzing circuit configurations and calculating the current and operational modes using the given formulas and parameters.
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