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Can you do 1.1 please

Can you do 1.1 please

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Can you do 1.1 please

Problem 1: CMOS Devices 1.1 Consider the amplifier shown in Figure 1. The MOSFET operates in its saturation region and is characterized by the parameters Vr and K. The input voltage vy comprises the sum of a DC bias voltage V, and a sinusoid of the form v; = A sinwt. Assume that A is very small compared to V1. Let the output voltage vo comprise a DC bias tem Vo and a small-signal response term vọ. Vs Asin(or) Figure 1: a) Determine the output operating point voltage Vo for the input bias of V. b) Determine the small signal gain of the amplifier. c) Draw the form of the input and output voltages as a function of time, clearly show- ing the DC and time-varying small-signal components. IV curve: Ips = (Vcs - VT)?, K: constant; Ves: Gate-source voltage; V;: Threshold Voltage.
Transcribed Image Text:Problem 1: CMOS Devices 1.1 Consider the amplifier shown in Figure 1. The MOSFET operates in its saturation region and is characterized by the parameters Vr and K. The input voltage vy comprises the sum of a DC bias voltage V, and a sinusoid of the form v; = A sinwt. Assume that A is very small compared to V1. Let the output voltage vo comprise a DC bias tem Vo and a small-signal response term vọ. Vs Asin(or) Figure 1: a) Determine the output operating point voltage Vo for the input bias of V. b) Determine the small signal gain of the amplifier. c) Draw the form of the input and output voltages as a function of time, clearly show- ing the DC and time-varying small-signal components. IV curve: Ips = (Vcs - VT)?, K: constant; Ves: Gate-source voltage; V;: Threshold Voltage.
1.2 Develop the small signal model for a two-terminal device formed by a MOSFET with its gate tied to its drain, operating under the saturation discipline, with parameters Vr and K. 1.3 Develop the small signal model for a two-terminal device formed between the drain and source terminals of a MOSFET with a 2 volt DC source connected between its gate and source terminals (Vcs = 2V). Assume the MOSFET operates under the saturation discipline. Assume further that Vr = 1 volt for the MOSFET.
Transcribed Image Text:1.2 Develop the small signal model for a two-terminal device formed by a MOSFET with its gate tied to its drain, operating under the saturation discipline, with parameters Vr and K. 1.3 Develop the small signal model for a two-terminal device formed between the drain and source terminals of a MOSFET with a 2 volt DC source connected between its gate and source terminals (Vcs = 2V). Assume the MOSFET operates under the saturation discipline. Assume further that Vr = 1 volt for the MOSFET.
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